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    TRANSISTOR 2N3766 Search Results

    TRANSISTOR 2N3766 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N3766 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3767

    Abstract: 2N3766 2000C transistor 2N3766
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C 2N3767 2N3766 2000C transistor 2N3766

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    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 518 Devices Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF MIL-PRF-19500/ 2N3766 2N3767 O-213AA) 2000C

    2n3767

    Abstract: 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66
    Text: Central 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.


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    PDF 2N3766 2N3767 2N3766, 2N3767 100mA 2N3766) 2N3767) 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66

    2N3767

    Abstract: 2N3766 2000C
    Text: TECHNICAL DATA 2N3766 JAN, JTX, JTXV 2N3767 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/518 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2N3766 2N3767 MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C

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    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 • LOW SATURATION VOLTAGE • HIGH GAIN CHARACTERISTICS • HERMETICALLY SEALED TO-66 METAL PACKAGE • SCREENING OPTIONS AVAILABLE • SWITCHING APPLICATIONS • MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N3766 143mW/Â 100mA O-213AA)

    2N3766

    Abstract: 2N3767 JANTX 2N3767
    Text: NPN Power Silicon Transistor 2N3766 & 2N3767 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N3766 2N3767 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage


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    PDF 2N3766 2N3767 MIL-PRF-19500/518 O-213AA) 2N3766 2N3767 JANTX

    2N3766

    Abstract: transistor 2N3766
    Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 • LOW SATURATION VOLTAGE • HIGH GAIN CHARACTERISTICS • HERMETICALLY SEALED TO-66 METAL PACKAGE • SCREENING OPTIONS AVAILABLE • SWITCHING APPLICATIONS • MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N3766 143mW/ O-213AA) 2N3766 transistor 2N3766

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    5N520

    Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278
    Text: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V


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    PDF 0-300V 2N1938 2N1937 2N3265 2N6260 2N6261 2N6315 2N6317 2N6316 2N6318 5N520 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


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    PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766

    MC 151 pnp

    Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>


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    PDF 0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4698 2N4910 2N2853 MC 151 pnp 05Z5 2N3740A 2N3741A 2N4900

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    406j transistor

    Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and


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    PDF 14-PtN 406j transistor 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846

    Untitled

    Abstract: No abstract text available
    Text: 27E D IUCROSEMI CÔRP/POüJER • bllS^SQ G0GG5ai 1 ■ PTC T'33~0l W> a <u a Microsemi Company Transistor Experts Since 1974 Power Technology Com ponents, e o a E Power Transistors Now Available FromP.T.C. : U tè JO 'S c ■8 £u % Ck Device Type Polarity


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    PDF 2N3739 2N656 2N3740 2N656A 2N3741 2N1047 2N3749 2N1047A 2N3766 2N1048A

    npn transistor to-66

    Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 [email protected]/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) l*FE@ V V ce PACKAGE (min/max @ A/V) p • D*


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    PDF 2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A npn transistor to-66 TRANSISTOR 751 2N3584 2n3767

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


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    PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


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    PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    X9116WM8I-2.7T1

    Abstract: 2N6315
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 Vceo Ic sus (max) VOLTS AMPS ^FE IC/ Vce (min/max @ A/V) fx (MHz) [email protected]/.05 75 3 1 [email protected]/10 5@1/.125 35 10 300h 5 25-100@1/10 .75@1/.125 35 10 2N3585A 400h 5 25-100@1/10 .75@1/.125 35 10 2N3738


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    PDF 2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A X9116WM8I-2.7T1 2N6315