tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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NPN Transistor TO220 VCEO 50v i 10A
Abstract: BUT12
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
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BUT12AI
O220AB
NPN Transistor TO220 VCEO 50v i 10A
BUT12
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BUT12AX
Abstract: BUT12
Text: BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features • Isolated package ■ Fast switching. 1.3 Applications
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BUT12AX
M3D308
OT186A
O-220F)
MBB008
MBK110
OT186
BUT12AX
BUT12
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PDF
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BUT12XI
Abstract: BUX100 BUT12
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
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BUT12XI
BUT12XI
BUX100
BUT12
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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PC based dc motor speed control
Abstract: BUT12 transistor but12
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT12 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃
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BUT12
PC based dc motor speed control
BUT12
transistor but12
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BUT12AF
Abstract: BUT12AF equivalent transistor IC 12A
Text: BUT12AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F
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BUT12AF
O-220F
16KHz
100mA
16KHz
BUT12AF
BUT12AF equivalent
transistor IC 12A
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PDF
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NPN Transistor TO220 vcc 150V
Abstract: BUT12A transistor IC 12A
Text: BUT12A SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220 PARAMETER
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BUT12A
O-220
16KHz
100mA
16KHz
NPN Transistor TO220 vcc 150V
BUT12A
transistor IC 12A
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PDF
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NPN Transistor TO220 vcc 150V
Abstract: BUT12 transistor IC 12A
Text: SILICON DIFFUSED POWER TRANSISTOR BUT12 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER
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BUT12
O-220
16KHz
100mA
16KHz
NPN Transistor TO220 vcc 150V
BUT12
transistor IC 12A
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PDF
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BUT12
Abstract: No abstract text available
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage
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BUT12/12A
O-220
BUT12
BUT12A
BUT12
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BUT12
Abstract: BUT12A
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage
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BUT12/12A
O-220
BUT12
BUT12A
BUT12
BUT12A
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PDF
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BUT12A
Abstract: BUT12
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage
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BUT12/12A
O-220
BUT12
BUT12A
BUT12A
BUT12
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pt 4115 led driver
Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage
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BUT12/12A
O-220
BUT12
BUT12A
KM4211-PB:
KM4211
FAN5231-PB:
pt 4115 led driver
AN-7527
an7527
an5043
AN-7501
AN-7502
AN42045
transistor k 4110
PC100 NPN
ML4425
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PDF
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BUT12
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
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OCR Scan
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BUT12AI
T0220AB
BUT12
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PDF
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BUT12
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,
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OCR Scan
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BUT12AI
T0220AB
20icon
1E-01
1E-02
BUT12
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PDF
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BUT12A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a T0-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators
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OCR Scan
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T0-220AB
BUT12;
BUT12A
BUT12
BUT12A
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transistor but12af
Abstract: but 12af BUT12F BUT12 BUT12AF
Text: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. PIN base 2 collector 3 emitter mb APPLICATIONS
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OCR Scan
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OT186
BUT12F;
BUT12AF
OT186)
BUT12F
BUT12AF
transistor but12af
but 12af
BUT12
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PDF
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TRANSISTOR but12
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. F o i APPLICATIONS • Converters • Inverters • Switching regulators
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OCR Scan
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O-220AB
BUT12;
BUT12A
MBB008
MBK106
O-22QAB)
BUT12
BUT12A
TRANSISTOR but12
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Untitled
Abstract: No abstract text available
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)
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OCR Scan
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BUT12/12A
BUT12A
BUT12
100mA,
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PDF
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BUT12
Abstract: No abstract text available
Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BUT12 Rating Unit 850 V 1000 V 400 V VCES : B UT12A Collector Emitter Voltage : BUT12 VcEO : B UT12A 450 V
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OCR Scan
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BUT12/12
BUT12
UT12A
UT12A
BUT12
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PDF
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but12 transistor
Abstract: No abstract text available
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol BUT12 BUT12A Rating Unit 850 V 1000 V 400 450 8 V V 20 4 A A 100 150 W VcES Collector Emitter Voltage BUT12 BUT12A
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OCR Scan
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BUT12/12A
BUT12
BUT12A
BUT12A
300uS,
100mA,
but12 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O BU T12A
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OCR Scan
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BUT12/12A
BUT12
300ns,
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BUT12A
Abstract: BUT12 PC100-W
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BUT12 Rating BU T12A Unit 850 V 1000 V 400 V 450 V V ceS C ollector E m itter Voltage BUT12 V cE O BU T12A
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OCR Scan
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BUT12/12A
BUT12
BUT12A
100mA,
10perature
300ns,
BUT12A
PC100-W
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PDF
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L25-M
Abstract: l25m BUT 1 BUT12
Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse
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OCR Scan
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BUT12/12
O-220
100mA,
L25-M
l25m
BUT 1
BUT12
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PDF
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