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    TRANSISTOR BUT12 Search Results

    TRANSISTOR BUT12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUT12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


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    Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 PDF

    NPN Transistor TO220 VCEO 50v i 10A

    Abstract: BUT12
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,


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    BUT12AI O220AB NPN Transistor TO220 VCEO 50v i 10A BUT12 PDF

    BUT12AX

    Abstract: BUT12
    Text: BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features • Isolated package ■ Fast switching. 1.3 Applications


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    BUT12AX M3D308 OT186A O-220F) MBB008 MBK110 OT186 BUT12AX BUT12 PDF

    BUT12XI

    Abstract: BUX100 BUT12
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,


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    BUT12XI BUT12XI BUX100 BUT12 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    PC based dc motor speed control

    Abstract: BUT12 transistor but12
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT12 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃


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    BUT12 PC based dc motor speed control BUT12 transistor but12 PDF

    BUT12AF

    Abstract: BUT12AF equivalent transistor IC 12A
    Text: BUT12AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F


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    BUT12AF O-220F 16KHz 100mA 16KHz BUT12AF BUT12AF equivalent transistor IC 12A PDF

    NPN Transistor TO220 vcc 150V

    Abstract: BUT12A transistor IC 12A
    Text: BUT12A SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220 PARAMETER


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    BUT12A O-220 16KHz 100mA 16KHz NPN Transistor TO220 vcc 150V BUT12A transistor IC 12A PDF

    NPN Transistor TO220 vcc 150V

    Abstract: BUT12 transistor IC 12A
    Text: SILICON DIFFUSED POWER TRANSISTOR BUT12 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER


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    BUT12 O-220 16KHz 100mA 16KHz NPN Transistor TO220 vcc 150V BUT12 transistor IC 12A PDF

    BUT12

    Abstract: No abstract text available
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A BUT12 PDF

    BUT12

    Abstract: BUT12A
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A BUT12 BUT12A PDF

    BUT12A

    Abstract: BUT12
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A BUT12A BUT12 PDF

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425 PDF

    BUT12

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,


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    BUT12AI T0220AB BUT12 PDF

    BUT12

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,


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    BUT12AI T0220AB 20icon 1E-01 1E-02 BUT12 PDF

    BUT12A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a T0-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators


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    T0-220AB BUT12; BUT12A BUT12 BUT12A PDF

    transistor but12af

    Abstract: but 12af BUT12F BUT12 BUT12AF
    Text: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. PIN base 2 collector 3 emitter mb APPLICATIONS


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    OT186 BUT12F; BUT12AF OT186) BUT12F BUT12AF transistor but12af but 12af BUT12 PDF

    TRANSISTOR but12

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. F o i APPLICATIONS • Converters • Inverters • Switching regulators


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    O-220AB BUT12; BUT12A MBB008 MBK106 O-22QAB) BUT12 BUT12A TRANSISTOR but12 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)


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    BUT12/12A BUT12A BUT12 100mA, PDF

    BUT12

    Abstract: No abstract text available
    Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BUT12 Rating Unit 850 V 1000 V 400 V VCES : B UT12A Collector Emitter Voltage : BUT12 VcEO : B UT12A 450 V


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    BUT12/12 BUT12 UT12A UT12A BUT12 PDF

    but12 transistor

    Abstract: No abstract text available
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol BUT12 BUT12A Rating Unit 850 V 1000 V 400 450 8 V V 20 4 A A 100 150 W VcES Collector Emitter Voltage BUT12 BUT12A


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    BUT12/12A BUT12 BUT12A BUT12A 300uS, 100mA, but12 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O BU T12A


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    BUT12/12A BUT12 300ns, PDF

    BUT12A

    Abstract: BUT12 PC100-W
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BUT12 Rating BU T12A Unit 850 V 1000 V 400 V 450 V V ceS C ollector E m itter Voltage BUT12 V cE O BU T12A


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    BUT12/12A BUT12 BUT12A 100mA, 10perature 300ns, BUT12A PC100-W PDF

    L25-M

    Abstract: l25m BUT 1 BUT12
    Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse


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    BUT12/12 O-220 100mA, L25-M l25m BUT 1 BUT12 PDF