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    TRANSISTOR CB 369 Search Results

    TRANSISTOR CB 369 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CB 369 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TN3467A TN3467A C B TO-226 E PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value


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    TN3467A O-226 OT-223 1N916 PDF

    Untitled

    Abstract: No abstract text available
    Text: AC-DC 250 Watts CCB250 Series xppower.com • 250 W Convection Cooled • 300 W Peak Rating for 500 ms • Very High Efficiency up to 95% • 5 V Standby Rail and Inhibit Function • 80 275 VAC Operation • IT & Medical BF Safety Approvals • 3 Year Warranty


    Original
    CCB250 VAC/60 16-Mar-12 CCB250 PDF

    ALG TRANSISTOR

    Abstract: transistor PNP ALG transistor BC 368
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage


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    15A3DIN ALG TRANSISTOR transistor PNP ALG transistor BC 368 PDF

    BC369

    Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
    Text: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.


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    D027S43 BC369 BC368/BC369 BC369 TRANSISTOR bH Silicon Epitaxial Planar Transistor philips PDF

    bc 369 pnp silicon transistor

    Abstract: TRANSISTOR bC 369 transistor BC 55 TRANSISTOR C 369 BC 369 transistor BC 368
    Text: 4M > BC 369 'W Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n iedriger Betriebsspannung. Kom plem entärtype zu BC 368 Applications: Com plem entary audio amplifier, driver and output stages fo r low supply voltage.


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    TIP12B

    Abstract: tip127 texas tip 127 TIP127 tip 127 texas instruments 2n6128 TIP120 TIP121 TIP122 TIP125
    Text: TEXAS INSTR ÎOPTOÏ 8961726 TEXAS b5 INSTR D E | flTblYSb □ D3fc.cl[]D 4 <OPTO> 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed For Complementary use with TIP 120, TIP 121, TIP 122


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    TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 T0-22QAB T-33-31 TIP125 TIP126 TIP12B tip127 texas tip 127 tip 127 texas instruments 2n6128 TIP120 TIP121 PDF

    LB 122 transistor To-92

    Abstract: BC368 BG368 B-G368 Philips 119 Silicon Epitaxial Planar Transistor philips
    Text: b'iE D • 1^53=131 □DB7S3b TIE I IAPX BC368 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92envelope, intended for low-voltage, high current L F applications. BC368/BC 369 is the matched complementary pair suitable fo r class-B audio output stages up to 3 W.


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    BC368 O-92envelope, BC368/BC369 LB 122 transistor To-92 BC368 BG368 B-G368 Philips 119 Silicon Epitaxial Planar Transistor philips PDF

    TIP135 texas

    Abstract: C3691
    Text: TEXAS INSTR -COPTOJ- 8961726 TE XAS bS INSTR D E § flit, 1 7 2 b □□ 3 ^ 1 5 62C 36912 OPTO TIP135, TIP136, TIP137 P-N-P DARLINGTON SILICON POWER TRANSISTORS REVISED OCTOBER 1984 T Designed For Complementary Use With TIP130, TIP131, TIP132 T-33-3 1 70 W at 2 5 ° C Case Temperature


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    TIP135, TIP136, TIP137 TIP130, TIP131, TIP132 T-33-3 100ft TIP135 7S265 TIP135 texas C3691 PDF

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


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    2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 PDF

    Untitled

    Abstract: No abstract text available
    Text: N APIER PHILIPS/DISCRETE bTE T> b b S B ' m □Q2flc?c17 T44 • APX BLV33F A V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Features o f this product:


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    BLV33F BLV33F PDF

    TRANSISTOR C 369

    Abstract: transistor cb 369 transistor BC 368 TRANSISTOR bC 369 BC368 BC369 2586 TRANSISTOR 2586
    Text: BC 368 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n ie driger Betriebsspannung. Kom plem entärtype zu BC 369 Applications: C om plem entary audio amplifier, d river and o utput stages fo r lo w su p p ly voltage.


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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistor BC369 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 base 2 co lle cto r 3 e m itte r • G eneral purpose sw itching and am plification


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    BC369 BC368. SC-43 PDF

    q1205

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)


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    C62702-C748 150iiin E35LD5 flE35bQ5 q1205 PDF

    BC869

    Abstract: BC869-10 BC869-16 BC869-25
    Text: • bbsa'm □Q24Mt15 m N AMER PHILIPS/DISCRETE ■ APX BC869 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic m icrom iniature envelope, intended fo r low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio o u tp u t


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    BC869 BC868/BC869 BC869 BC869-10 BC869-16 BC869-25 PDF

    BF579

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E OhE D • ^^53=131 0015750 T ■ BF579 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and


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    001S75D BF579 800MHz BF579 T-31-15 PDF

    T1P142

    Abstract: TIP142 TIP147 T1P141
    Text: »e"§ a^lTEt, OOBbTlö h2 TEXAS INSTR ÌOPTO> ' 8961726 TEXAS INSTR T-33-29 62C 36918 OPTO TIP140, TIP141, TIP142 N-P-N DARLINGTON-COIMNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed For Complementary Use With T IP 145, T IP146, TIP147


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    T-33-29 TIP140, TIP141, TIP142 IP146, TIP147 TIP140 T1P142 TIP142 TIP147 T1P141 PDF

    TIP621

    Abstract: TIP620 1N914 2N6127 TIP622 TIP625 TIP626 TIP627 A50FI
    Text: INSTR COPTO 8961726 TEXAS »FJäTbiTab □□Bbisa s INSTR 62C OPTO . 36958 TIP620, TIP621, TIP622 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary use with T IP 6 2 5, T IP 6 2 6, TIP 627 • 6 5 W a t 2 5 ° C Case Temperature


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    TIP620, TIP621, TIP622 TIP625, TIP626, TIP627 T-33-29 TIP620 TIP621 TIP622 1N914 2N6127 TIP625 TIP626 A50FI PDF

    2SD369

    Abstract: IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O
    Text: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR I il I f ffl o ±n,t> * 4 o D C - D C V >'< - * m o INDUSTRIAL APPLICATIONS Unit in m m - * m A u dio 369 Itower A m p l i f i e r , Power S w i t c h i n g DC-DC C o n v e r t e r and R e g u l a t o r A p p l i c a t i o n s .


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    2sd369 AC73tttffl 300X300X2mm 100X100X2mm 2SD369 IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O PDF

    BD234

    Abstract: No abstract text available
    Text: MO TQR CLA SC 1SE D | 1 317554 00fiM7ai 1 | XSTRS/R F 7^-33-/? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2.0 AMPERES POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . d e sig n e d for u se in 5.0 to 10 W a tt a u d io a m p lifie rs a n d drivers


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    00fiM7ai BD234 BD236 BD236 O-225AA PDF

    RCA8350B

    Abstract: No abstract text available
    Text: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT | a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602


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    TIP605, TIP606, TIP600, TIP601, TIP602 2N6053, 2N6054. RCA8350, RCA8350A, RCA8350B RCA8350B PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    transistor tt 2222

    Abstract: D2l10 BLV33F transistor rf vhf G37 IC
    Text: N AHER PHILIPS/DISCRETE bTE D • b b S B 'J a i J □ G 2 Û R ei 7 144 IAPX BLV33F V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers.


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    BLV33F BLV33F ABELV33FILIPS/ 7z88099 transistor tt 2222 D2l10 transistor rf vhf G37 IC PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking


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    Q62702-F944 OT-23 fl23SbDS 00bb7fi EHTG7054 PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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