Untitled
Abstract: No abstract text available
Text: TN3467A TN3467A C B TO-226 E PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value
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TN3467A
O-226
OT-223
1N916
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Untitled
Abstract: No abstract text available
Text: AC-DC 250 Watts CCB250 Series xppower.com • 250 W Convection Cooled • 300 W Peak Rating for 500 ms • Very High Efficiency up to 95% • 5 V Standby Rail and Inhibit Function • 80 275 VAC Operation • IT & Medical BF Safety Approvals • 3 Year Warranty
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CCB250
VAC/60
16-Mar-12
CCB250
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ALG TRANSISTOR
Abstract: transistor PNP ALG transistor BC 368
Text: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage
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15A3DIN
ALG TRANSISTOR
transistor PNP ALG
transistor BC 368
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BC369
Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Text: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.
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D027S43
BC369
BC368/BC369
BC369
TRANSISTOR bH
Silicon Epitaxial Planar Transistor philips
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bc 369 pnp silicon transistor
Abstract: TRANSISTOR bC 369 transistor BC 55 TRANSISTOR C 369 BC 369 transistor BC 368
Text: 4M > BC 369 'W Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n iedriger Betriebsspannung. Kom plem entärtype zu BC 368 Applications: Com plem entary audio amplifier, driver and output stages fo r low supply voltage.
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TIP12B
Abstract: tip127 texas tip 127 TIP127 tip 127 texas instruments 2n6128 TIP120 TIP121 TIP122 TIP125
Text: TEXAS INSTR ÎOPTOÏ 8961726 TEXAS b5 INSTR D E | flTblYSb □ D3fc.cl[]D 4 <OPTO> 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed For Complementary use with TIP 120, TIP 121, TIP 122
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TIP125,
TIP126,
TIP127
TIP120,
TIP121,
TIP122
T0-22QAB
T-33-31
TIP125
TIP126
TIP12B
tip127 texas
tip 127
tip 127 texas instruments
2n6128
TIP120
TIP121
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LB 122 transistor To-92
Abstract: BC368 BG368 B-G368 Philips 119 Silicon Epitaxial Planar Transistor philips
Text: b'iE D • 1^53=131 □DB7S3b TIE I IAPX BC368 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92envelope, intended for low-voltage, high current L F applications. BC368/BC 369 is the matched complementary pair suitable fo r class-B audio output stages up to 3 W.
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BC368
O-92envelope,
BC368/BC369
LB 122 transistor To-92
BC368
BG368
B-G368
Philips 119
Silicon Epitaxial Planar Transistor philips
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TIP135 texas
Abstract: C3691
Text: TEXAS INSTR -COPTOJ- 8961726 TE XAS bS INSTR D E § flit, 1 7 2 b □□ 3 ^ 1 5 62C 36912 OPTO TIP135, TIP136, TIP137 P-N-P DARLINGTON SILICON POWER TRANSISTORS REVISED OCTOBER 1984 T Designed For Complementary Use With TIP130, TIP131, TIP132 T-33-3 1 70 W at 2 5 ° C Case Temperature
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TIP135,
TIP136,
TIP137
TIP130,
TIP131,
TIP132
T-33-3
100ft
TIP135
7S265
TIP135 texas
C3691
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PDF
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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2PC1815L
2PC1815
10xx0.
7Z88986
smd npn 2n2222
bf471
BSR62 equivalent
EQUIVALENT TRANSISTOR bc549c
transistor bf 175
transistor bc547 PH in metal detector
tunnel diode
BSY95A
BF470
BC200
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE bTE T> b b S B ' m □Q2flc?c17 T44 • APX BLV33F A V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Features o f this product:
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BLV33F
BLV33F
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TRANSISTOR C 369
Abstract: transistor cb 369 transistor BC 368 TRANSISTOR bC 369 BC368 BC369 2586 TRANSISTOR 2586
Text: BC 368 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n ie driger Betriebsspannung. Kom plem entärtype zu BC 369 Applications: C om plem entary audio amplifier, d river and o utput stages fo r lo w su p p ly voltage.
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP medium power transistor BC369 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 base 2 co lle cto r 3 e m itte r • G eneral purpose sw itching and am plification
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BC369
BC368.
SC-43
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q1205
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)
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C62702-C748
150iiin
E35LD5
flE35bQ5
q1205
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BC869
Abstract: BC869-10 BC869-16 BC869-25
Text: • bbsa'm □Q24Mt15 m N AMER PHILIPS/DISCRETE ■ APX BC869 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic m icrom iniature envelope, intended fo r low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio o u tp u t
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BC869
BC868/BC869
BC869
BC869-10
BC869-16
BC869-25
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BF579
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E OhE D • ^^53=131 0015750 T ■ BF579 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and
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001S75D
BF579
800MHz
BF579
T-31-15
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T1P142
Abstract: TIP142 TIP147 T1P141
Text: »e"§ a^lTEt, OOBbTlö h2 TEXAS INSTR ÌOPTO> ' 8961726 TEXAS INSTR T-33-29 62C 36918 OPTO TIP140, TIP141, TIP142 N-P-N DARLINGTON-COIMNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed For Complementary Use With T IP 145, T IP146, TIP147
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T-33-29
TIP140,
TIP141,
TIP142
IP146,
TIP147
TIP140
T1P142
TIP142 TIP147
T1P141
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PDF
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TIP621
Abstract: TIP620 1N914 2N6127 TIP622 TIP625 TIP626 TIP627 A50FI
Text: INSTR COPTO 8961726 TEXAS »FJäTbiTab □□Bbisa s INSTR 62C OPTO . 36958 TIP620, TIP621, TIP622 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary use with T IP 6 2 5, T IP 6 2 6, TIP 627 • 6 5 W a t 2 5 ° C Case Temperature
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TIP620,
TIP621,
TIP622
TIP625,
TIP626,
TIP627
T-33-29
TIP620
TIP621
TIP622
1N914
2N6127
TIP625
TIP626
A50FI
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2SD369
Abstract: IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O
Text: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR I il I f ffl o ±n,t> * 4 o D C - D C V >'< - * m o INDUSTRIAL APPLICATIONS Unit in m m - * m A u dio 369 Itower A m p l i f i e r , Power S w i t c h i n g DC-DC C o n v e r t e r and R e g u l a t o r A p p l i c a t i o n s .
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2sd369
AC73tttffl
300X300X2mm
100X100X2mm
2SD369
IC 200 UDR 005
2SD369-Y
100W AUDIO ic AMPLIFIER
251C
2SD369-0
Sink15
2SD369O
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BD234
Abstract: No abstract text available
Text: MO TQR CLA SC 1SE D | 1 317554 00fiM7ai 1 | XSTRS/R F 7^-33-/? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2.0 AMPERES POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . d e sig n e d for u se in 5.0 to 10 W a tt a u d io a m p lifie rs a n d drivers
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00fiM7ai
BD234
BD236
BD236
O-225AA
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RCA8350B
Abstract: No abstract text available
Text: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT | a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602
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TIP605,
TIP606,
TIP600,
TIP601,
TIP602
2N6053,
2N6054.
RCA8350,
RCA8350A,
RCA8350B
RCA8350B
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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transistor tt 2222
Abstract: D2l10 BLV33F transistor rf vhf G37 IC
Text: N AHER PHILIPS/DISCRETE bTE D • b b S B 'J a i J □ G 2 Û R ei 7 144 IAPX BLV33F V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers.
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BLV33F
BLV33F
ABELV33FILIPS/
7z88099
transistor tt 2222
D2l10
transistor rf vhf
G37 IC
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking
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Q62702-F944
OT-23
fl23SbDS
00bb7fi
EHTG7054
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PDF
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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