TRANSISTOR D 945 Search Results

TRANSISTOR D 945 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR D 945 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NPN transistor mhz s-parameter Abstract: transistor c 2316 Text: S 852 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low supply voltage	Original	PDF	D-74025 NPN transistor mhz s-parameter transistor c 2316
telefunken IC 121 Abstract: No abstract text available Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure	Original	PDF	D-74025 telefunken IC 121
S852TW Abstract: NPN transistor mhz s-parameter Text: S852TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption	Original	PDF	S852TW D-74025 07-Nov-97 S852TW NPN transistor mhz s-parameter
945 npn Abstract: C 945 npn S822TW 0930 IC Text: S822TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption	Original	PDF	S822TW D-74025 07-Nov-97 945 npn C 945 npn S822TW 0930 IC
silicon npn planar rf transistor sot 143 Abstract: 945 npn S822T Text: S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption	Original	PDF	S822T D-74025 08-Apr-97 silicon npn planar rf transistor sot 143 945 npn S822T
S852T Abstract: NPN transistor mhz s-parameter Text: S852T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption	Original	PDF	S852T D-74025 08-Apr-97 S852T NPN transistor mhz s-parameter
ic 3845 Abstract: transistor IC 1557 b S822T 601 644 k 547 c 945 3268 Text: S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption	Original	PDF	S822T 12the D-74025 18-Apr-96 ic 3845 transistor IC 1557 b S822T 601 644 k 547 c 945 3268
NPN transistor mhz s-parameter Abstract: 945 TRANSISTOR S852T Text: S852T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption	Original	PDF	S852T 15the D-74025 18-Apr-96 NPN transistor mhz s-parameter 945 TRANSISTOR S852T
K 3699 transistor Abstract: BLY88A 3699 npn pscw Text: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	PDF	GGmi32 BLY88A K 3699 transistor BLY88A 3699 npn pscw
lc 945 p transistor NPN TO 92 Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision Text: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.	OCR Scan	PDF	0G14D10 BLX96 lc 945 p transistor NPN TO 92 BLX96 blx96a IEC134 lc 945 p transistor s3 vision
Untitled Abstract: No abstract text available Text: OLE D N AUER PHILIPS/DISCRETE 86D MAINTENANCE TYPE ^5 3 *1 3 1 DOIHQIQ 1 T ~ 3 ?-o y D 01852 • BLX96 _Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u .h .f. amplifiers for television transposers and transmitters.	OCR Scan	PDF	BLX96 7ZH737 bbS3T31 -16dB)
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
BLX92A Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	PDF	BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
lc 945 p transistor NPN TO 92 Abstract: No abstract text available Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended	OCR Scan	PDF

lc 945 p transistor NPN Abstract: lc 945 p transistor transistor LC 945 lc 945 transistor Text: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for	OCR Scan	PDF	T-------------14 lc 945 p transistor NPN lc 945 p transistor transistor LC 945 lc 945 transistor
BLX13C Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v Text: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear	OCR Scan	PDF	Db34Mcl BLX13C 711005b 00fci34S7 7Z77839 BLX13C BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
lc 945 p transistor NPN Abstract: No abstract text available Text: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications.	OCR Scan	PDF
lc 945 p transistor NPN TO 92 Abstract: lc 945 p transistor lc 945 transistor lc 945 p transistor NPN Text: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP	OCR Scan	PDF
ericsson 20144 Abstract: lc 945 p transistor Text: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications.	OCR Scan	PDF
lc 945 p transistor NPN TO 92 Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor Text: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.	OCR Scan	PDF
lc 945 p transistor Abstract: transistor LC 945 lc 945 transistor Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for	OCR Scan	PDF
IR2E27A Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28 Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r	OCR Scan	PDF	24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
transistor rf m 9860 Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490 Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for	OCR Scan	PDF	520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor D e s c rip tio n The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP	OCR Scan	PDF

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TRANSISTOR D 945 Search Results

TRANSISTOR D 945 Result Highlights (5)

TRANSISTOR D 945 Datasheets Context Search

NPN transistor mhz s-parameter

telefunken IC 121

S852TW

945 npn

silicon npn planar rf transistor sot 143

S852T

ic 3845

NPN transistor mhz s-parameter

K 3699 transistor

lc 945 p transistor NPN TO 92

Untitled

2N2222A 338

BLX92A

lc 945 p transistor NPN TO 92

lc 945 p transistor NPN

BLX13C

lc 945 p transistor NPN

lc 945 p transistor NPN TO 92

ericsson 20144

lc 945 p transistor NPN TO 92

lc 945 p transistor

IR2E27A

transistor rf m 9860

Untitled