1N5761
Abstract: si 1N4007 transistor toroid FT10 1N4007 BUL45 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: ON Semiconductort BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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Original
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BUL45
r14525
BUL45/D
1N5761
si 1N4007 transistor
toroid FT10
1N4007
BUL45
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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PDF
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1N5761
Abstract: No abstract text available
Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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Original
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BUL45
CurreUR150
MUR105
1N400
F/385
nF/1000
F/400
1N5761
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PDF
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toroid FT10
Abstract: 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210
Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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Original
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BUL45
r14525
BUL45/D
toroid FT10
1N5761
diode 1n400
MTP12N10
MTP8P10
MUR105
MUR150
1N4007
BUL45
MJE210
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PDF
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transistor bd4202
Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F* Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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Original
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BUL45
BUL45F*
BUL45F,
E69369
RATING32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
transistor bd4202
motorola AN485
transistor tip120
motorola MJ480
MJE802 MOTOROLA
TRANSISTOR REPLACEMENT GUIDE
2SC495 transistor
MJE1100 MOTOROLA
BUX98A
MJE170 motorola
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PDF
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MJF1800
Abstract: MJE1800
Text: ON Semiconductort BUL45 * BUL45F * NPN Silicon Power Transistor High Voltage SWITCHMODEt Series *ON Semiconductor Preferred Device Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include:
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Original
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BUL45
BUL45F
BUL45F,
E69369
r14525
BUL45/D
MJF1800
MJE1800
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PDF
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toroid FT10
Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F* Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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Original
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BUL45/D
BUL45
BUL45F*
BUL45F
BUL45/D*
toroid FT10
MTP8P10
MUR105
MJE18006
MJF18006
MPF930
221D
BUL45
BUL45F
L 0629
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PDF
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1N5761
Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F* Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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Original
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BUL45/D
BUL45
BUL45F*
BUL45F
BUL45/D*
1N5761
RM10-CORE
pl lamp ballast
MJF18006
221D
BUL45
BUL45F
MJE18006
MPF930
MTP8P10
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PDF
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1N5761
Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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Original
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BUL45G
O-220AB
21A-09
BUL45/D
1N5761
toroid FT10
BUL45G
BUL45
marking code t1a
MUR150
MJE210
MPF930
MTP12N10
MTP8P10
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PDF
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bul45g
Abstract: No abstract text available
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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Original
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BUL45G
O-220AB
21A-09
BUL45/D
bul45g
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PDF
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1N5761
Abstract: npn BUL45G bul45a
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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Original
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BUL45G
BUL45/D
1N5761
npn BUL45G
bul45a
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PDF
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1N5761
Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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Original
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BUL45
O-220AB
21A-09
BUL45/D
1N5761
marking code t1a
BUL45
BUL45G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
MUR150
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PDF
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BU1706AX
Abstract: BUT211X
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
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Original
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BUT211X
OT186A
BU1706AX
BUT211X
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PDF
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BUT211X
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
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Original
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BUT211X
OT186A
BUT211X
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PDF
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BU1706A
Abstract: BU1706AX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.
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Original
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BU1706AX
BU1706A
BU1706AX
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PDF
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BUJ205AX
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ205AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators,
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Original
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BUJ205AX
BUJ205AX
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PDF
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BUJ302AX
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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Original
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BUJ302AX
BUJ302AX
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PDF
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BUT21
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
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OCR Scan
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BUT211
T0220AB
BUT21
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PDF
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wk 2 e transistor
Abstract: transistor BU 705 BUT21
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
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OCR Scan
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BUT211
T0220AB
T0220AB1
wk 2 e transistor
transistor BU 705
BUT21
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.
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OCR Scan
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BU1706AX
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.
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OCR Scan
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BU1706AX
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PDF
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LB 122 transistor
Abstract: LB 124 transistor BU1706AX ballast electronic hps ELECTRONIC BALLAST 150 W HPS
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.
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OCR Scan
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BU1706AX
OT186A;
OT186
LB 122 transistor
LB 124 transistor
BU1706AX
ballast electronic hps
ELECTRONIC BALLAST 150 W HPS
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PDF
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lem HA
Abstract: BU1708AX
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.
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OCR Scan
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BU1708AX
OT186A;
OT186
007753b
lem HA
BU1708AX
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PDF
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BU1708AX
Abstract: 7DFL
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.
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OCR Scan
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BU1708AX
QD77S3S
f-rs54]
OT186A;
OT186
007753b
BU1708AX
7DFL
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PDF
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Untitled
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BUJ205AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators,
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OCR Scan
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BUJ205AX
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PDF
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