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    TRANSISTOR IRFP250 Search Results

    TRANSISTOR IRFP250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IRFP250 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFP250 application

    Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
    Text: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP250 TA9295. IRFP250 application irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334 PDF

    transistor IRFP250

    Abstract: No abstract text available
    Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP250 TB334 transistor IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-20615 HFA15TB60S HFA15TB60S 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95969 HFA08PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count VR = 600V


    Original     		PD-95969 HFA08PB60PbF HFA08PB60 08-Mar-07 PDF

    HFA15TB60S

    Abstract: IRFP250 SMD-220 MAR 618 transistor
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-20615 HFA15TB60S HFA15TB60S 12-Mar-07 IRFP250 SMD-220 MAR 618 transistor PDF

    diode BY 028

    Abstract: HFA08PB60 IRFP250
    Text: PD-95969 HFA08PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count VR = 600V


    Original     		PD-95969 HFA08PB60PbF HFA08PB60 O-247AC diode BY 028 IRFP250 PDF

    TRANSISTOR SMD MARKING CODE DM

    Abstract: transistor smd code marking tm HFA15TB60S IRFP250 SMD-220 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-20615 HFA15TB60S HFA15TB60S characterist86) SMD-220 TRANSISTOR SMD MARKING CODE DM transistor smd code marking tm IRFP250 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2 PDF

    HFA16TA60C

    Abstract: No abstract text available
    Text: HFA16TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base common cathode 2 1 • • • • • RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor


    Original     		HFA16TA60CPbF HFA16TA60C 12-Mar-07 PDF

    irrm1

    Abstract: HFA*B60
    Text: PD-95969 HFA08PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count VR = 600V


    Original     		PD-95969 HFA08PB60PbF HFA08PB60 12-Mar-07 irrm1 HFA*B60 PDF

    Untitled

    Abstract: No abstract text available
    Text: HFA08PB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • • • • • • 2 RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation


    Original     		HFA08PB60PbF HFA08PB60 12-Mar-07 PDF

    IR 1838 T

    Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PD-95740 HFA16TB120PbF 260nC HFA16TB120 12-Mar-07 IR 1838 T B120 HFA06TB120 IRFP250 PDF

    PA60C

    Abstract: HFA16PA60C IRFP250
    Text: Bulletin PD-2.606 rev. B 05/01 HFA16PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count


    Original     		HFA16PA60C HFA16PA60C O-247AC PA60C IRFP250 PDF

    IR 1838

    Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PD-95740 HFA16TB120PbF 260nC HFA16TB120 HFA06TB120 IR 1838 IRFP250 datasheet B120 HFA06TB120 IRFP250 PDF

    Transistor S 2606

    Abstract: No abstract text available
    Text: Bulletin PD-2.606 rev. B 05/01 HFA16PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count


    Original     		HFA16PA60C HFA16PA60C 08-Mar-07 Transistor S 2606 PDF

    HFA16PA60C

    Abstract: IRFP250
    Text: Bulletin PD-2.606 rev. B 05/01 HFA16PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count


    Original     		HFA16PA60C HFA16PA60C 12-Mar-07 IRFP250 PDF

    HFA08TA60C

    Abstract: No abstract text available
    Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor


    Original     		HFA08TA60CPbF HFA08TA60C 12-Mar-07 PDF

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400 PDF

    a06t

    Abstract: hfa08tb60pbf
    Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-95737 HFA08TB60PbF HFA08TB60 12-Mar-07 a06t hfa08tb60pbf PDF

    MT5C1008DCJ-45/SMD a06t transistor

    Abstract: No abstract text available
    Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-95737 HFA08TB60PbF HFA08TB60 08-Mar-07 MT5C1008DCJ-45/SMD a06t transistor PDF

    a06t

    Abstract: hfa08tb60pbf B120 HFA08TB60 IRFP250
    Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-95737 HFA08TB60PbF HFA08TB60 HFA06T a06t hfa08tb60pbf B120 IRFP250 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    HFA30TA60C

    Abstract: IRFP250
    Text: HFA30TA60C Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Base common cathode 2 BENEFITS • • • • • 2 Common cathode Anode 1 Reduced RFI and EMI Reduced power loss in diode and switching transistor


    Original     		HFA30TA60C O-220AB HFA30TA60C 18-Jul-08 IRFP250 PDF

    HFA08TA60C

    Abstract: No abstract text available
    Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor


    Original     		HFA08TA60CPbF HFA08TA60C 12-Mar-07 PDF

    IRFP250

    Abstract: d881 transistor IRFP250 D88FN2
    Text: F U IRFP250.251 P88FN2.M2 ? 30 AMPERES 200,150 VQLTS r DS ON = 0.085 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRFP250 D88FN2 50VQLTS 0-08S 00A//US, IRFP251/D88FM2 IRFP250/D88FN2 d881 transistor IRFP250 PDF