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    TRANSPACK TRANSISTOR Search Results

    TRANSPACK TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSPACK TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SGS30DA070D

    Abstract: 57558 SGS30DA060D 19002D SGS30DA060 SGS30D
    Text: S G S-THOilSON D7E D I TRANSPACK NPN POWER DARLINGTON 19001 m o dule APPLICATIONS: 7^237 These products are silicon NPN power dariingtons for industrial switching applications with three-phase mains operation. FAST FREEWHEEL DIODE ISOLATED POWER MODULE 30KVA - 375W


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    SGS30DA060D SGS30DA070D 30KVA SGS30DA070D 57558 19002D SGS30DA060 SGS30D PDF

    SGS15DB070D

    Abstract: sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E SGS15DB080D sgs15d
    Text: S G S-THONSON 07E D | 7=15=1237 QOlñTSb b 73C 1 8 9 8 5 u TRANSPACK NPN POWER A SG St5 D B 0 7 0 Îl DARLINGTON SGS15DB080D MODULE APPLICATIONS: These products are silicon NPN power dariingtons in half bridge configuration for industrial switching applications with three-phase mains operation.


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    SGS15DB080D 15KVA SGS15DB070D sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E sgs15d PDF

    Untitled

    Abstract: No abstract text available
    Text: r= 7 S C S -T H O M S O N M « I[L [I * ( M Û ( g S SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • ^DSS 500 V ^DS(on 0.20 0 *D 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE


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    SGS30MA050D1 A050D1 PDF

    SGS100MA010D1

    Abstract: S100M schematic diagram reverse forward motor
    Text: SGS-THOMSON SG S100M A010D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS ^D S on SGS100MA010D1 100 V 0.014 a • • • • • Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL INDUSTRIAL APPLICATIONS:


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    S100M A010D A010D1 SGS100MA010D1 SGS100MA010D1 schematic diagram reverse forward motor PDF

    SGS100MA010D1

    Abstract: SGS100M
    Text: r z T S G S -T H O M S O N ^ 7 # M g(M>i[L[I(g¥[RMO(gS S G S 10 0 M A 0 10 D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS100MA010D1 • • • • • VDss 100 V R DS(on 0.014 fi Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING


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    SGS100MA010D1 SC-0162 SGS100MA010D1 SGS100M PDF

    schematic diagram reverse forward motor

    Abstract: transpac
    Text: / S O^DMitLKgirMDgi T S G S -T H O M S O N SGS150MA01OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS on SGS150MA010D1 100 V 0.009 Si • • • • • 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL


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    SGS150MA01OD1 SGS150MA010D1 schematic diagram reverse forward motor transpac PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 S G S -T H O M S O N SGS35MA050D1 *J W „ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS on SGS35MA050D1 500 V 0.16 • • • • • fi 35 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL


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    SGS35MA050D1 SC-01« PDF

    SGS150MA010D1

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON ^7# RilD g»[l[Lll(gT»R(10(gi SGS150MA010D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSs SGS150MA010D1 100 V • • • • • RDS(on 0.009 n 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE


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    SGS150MA010D1 SGS150MA010D1 PDF

    SGS30MA050D1

    Abstract: No abstract text available
    Text: SGS-THOMSON ^ 7 # M g[M i[L[I(gra(Q)Rl(gS SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS(on) SGS30MA050D1 500 V 0.20 • • • • • U 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL


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    SGS30MA050D1 SC-0162 SGS30MA050D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3DE P • 7^ 5 3 7 OQgqflqi S G S -T H O M S O N I Li(g?GMO(gS 4 ■ n _ r 3 <ì - i S s~ T ì ^ hoMSo n — SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • VDSS 500 V ^DS(on 0.20 ß 30 A ISOLATED POWERMOS MODULE


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    SGS30MA050D1 A050D1 7SB1B37 PDF

    SGS35MA050D1

    Abstract: SGS35M
    Text: Æ 7 SGS-TtiOMSON * 7 Æ U HD ^ IlLi©Tr^®RDD©S SGS35MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS35MA050D1 • • • • • VDSS 500 V ^DS on •d 0.16 Q 35 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE


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    SGS35MA050D1 A050D1 SGS35MA050D1 SGS35M PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D B 7^2^537 OOSW? S • ^ T "3 » C |-j5 S G S -T H O M S O N ^ ^ thomson EL[i gTO10(gS_ S G S 3 5 M A 0 5 0 D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS35MA050D1 • • • • • V qss 500 V f*DS(on 0.16 Q Id 35 A


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    gTO10 A050D1 f25eC 71E1E37 SGS35MA050D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 30E D H V 'të 'ïE B ? S G S -T H O M S O N I!Li TnS IRÖO©S G Q E '^ O 'Ì fl • - ' p 3 0 [_ ] 5 s 6 ^ TH0MS0N S G S 1 5 0 M A 0 1 OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V qss ^DS on SGS150MA010D1 100 V 0.009 • • •


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    SGS150MA010D1 10jiH PDF

    SGS100MA010D1

    Abstract: No abstract text available
    Text: . 3DE » • 7 Ej g ci S 3 7 005^03 S G S -T H O M S O N ^ A T#n, M ^© H [Li gTO i3n(gi s - m i ^ i r S G S 1 OOMAQ1OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V dss SGS100MA010D1 100 V • • • • • ^DSfon 0.014 G 120 A ISOLATED POWERMOS MODULE


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    SGS100MA010D1 SGS100MA01OD1 SGS100MA010D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: F s 3 DE D I S C S TH O M S O N ¡[LBgïïËMDes 6 s • 7^2^237 0 0 3 Q S C12 T ■ ' TSD20N1 OOF TSD20N100V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE - thomson _ TENTATIVE DATA TYPE TSD20N100F/V . . ■ . ■ V dss RDS on 1000 V 0.5 n


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    003QSC TSD20N1 TSD20N100V TSD20N100F/V O-240) PC-029« PDF

    schematic diagram UPS

    Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
    Text: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS


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    TSD180N1 TSD180N1OV TSD180N10F/V C045S0 T-91-20 O-240) schematic diagram UPS TSD180N10V k 815 MOSFET smps&ups TSD180N10F PDF

    TSD40N50DV

    Abstract: aval d 317 transistor
    Text: BQE D m 7eia,i237_Qa3as'-iti ? • ■ TSD40N50DF TSD40N50DV SGS-THOMSON üLiOTTiOiöOi s N - CHANNEL ENHANCEMENT MODE _ FREDFET MODULE S-THOMSON g TENTATIVE DATA TY P E V dss RüS on Id TS D 40N 50D F/D V 500 V 0.12 £2 40 A . POWER MOS TRANSISTOR MODULE WITH


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    TSD40N50DF TSD40N50DV O-240) PC-029« TSD40N50DV aval d 317 transistor PDF

    transistor c1237

    Abstract: TSD250N05V
    Text: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250


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    c1237 Q03QLi02 TSD250N05F TSD250N05V TSD250N05F/V O-240) PC-029« transistor c1237 TSD250N05V PDF

    SGS80DA020D

    Abstract: SGS80DA020 C180M 0809 al 9120 mosfet SGS80D
    Text: 30E D • 7^2^237 003GbflG 7 HI r^Z SGS-THOMSON ^ 7 # ¡ILi^BMDOt B T T ' | ’3 3 SGS80DA020D s -t h o m s o n NPN DARLINGTON POWER MODULE - ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING


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    003GbflG SGS80DA020D T0-240) O-240) PC-029« SGS80DA020D SGS80DA020 C180M 0809 al 9120 mosfet SGS80D PDF

    SD 1496 transistor

    Abstract: TSD2M350F
    Text: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE


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    QG3D534 TSD2M350F TSD2M350V TSD2M350F/V T-91-20 O-240) PC-029« SD 1496 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 3DE D H Z ! B TESTES? D Q 3 D 7S D 2 • ._ ^ 1 S G S - T H O M S O N A 7 I [»^ [¡[LICTliMDOS s 6 - IRFK6H350 N - CHANNEL ENHANCEMENT MODE - POWER MOS TRANSISTOR MODULE S - T H OM S ON ADVANCE DATA TYPE IR FK6H 350 V dss RDS on


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    IRFK6H350 T-91-20 O-240) PC-029« PDF

    NPN DARLINGTON POWER MODULE

    Abstract: SGS50DB040D 9120 mosfet SGS50D
    Text: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE


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    DD3D72D O-240) PC-029« NPN DARLINGTON POWER MODULE SGS50DB040D 9120 mosfet SGS50D PDF

    SGS50DA045D

    Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
    Text: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING


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    G03Dhba T0-240) O-240) PC-029« SGS50DA045D SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D PDF

    BUF298F

    Abstract: BUF298V 3641B
    Text: 3QE rz 7 ^ 7# D • QÜ3D33Ô 7 S C S -T H O M S O N K œ iL lû lM K S s G S TH0MS0N 3 U F 2 9 8 F BUF298V 'T -'S s^S NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE 2500V RMS


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    0Q3033Ã 3UF298F BUF298V BUF298F SC04830 T-91-20 O-240) BUF298F 3641B PDF