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Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor c5578 Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: [email protected] Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012	Original	MCAT-2003 transistor c5578 BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor	PDF
CSA LL-7874 Abstract: awm style 3239 vw-1 24 awg Belden AWM 3499 AWM 8085 VW-1 H AWM 1007 AWG 22 belden LL-7874 CSA 334 te 2395 CL1054 CL1052 Text: Hook-Up and Lead Wire Table of Contents 3 Hook-Up & Lead Wire Introduction: UL Style & CSA Type Listings PVC 300V, 80°C 300V, 105°C 600V, 105°C Type MW MIL-W-76C-PVC: 1000V, 80°C (Type B) MIL-W-16878/1-PVC: 600V, 105°C Hook-Up Wire on Racks: Wire Dispenser Kits	Original	MIL-W-76C-PVC: MIL-W-16878/1-PVC: MIL-W-16878/4: MIL-W-16878/6: Flex/150 CSA LL-7874 awm style 3239 vw-1 24 awg Belden AWM 3499 AWM 8085 VW-1 H AWM 1007 AWG 22 belden LL-7874 CSA 334 te 2395 CL1054 CL1052	PDF
ZLDQ250A Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A Text: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513	Original	pinwei0225 ZLDQ250A pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A	PDF
Untitled Abstract: No abstract text available Text: 3Q E D WM 7 ci 5 c1 2 3 7 Q 030m E SGS-THOMSON 1 • " P 3 c M s û S"TH0MS0N =[L[i(gTO10(g i M T H 4 0 N 0 6 C H IP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM ' DIE SIZE: 221x221 mils ' METALLIZATION: Top Al Back A u /C r/N i/A u ’ BACKSIDE THICKNESS:	OCR Scan	gTO10 221x221 18x18	PDF
Untitled Abstract: No abstract text available Text: 3QE D B 7^2^537 OOSW? S • ^ T "3 » C \|-j5 S G S -T H O M S O N ^ ^ thomson EL[i gTO10(gS_ S G S 3 5 M A 0 5 0 D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS35MA050D1 • • • • • V qss 500 V f*DS(on 0.16 Q Id 35 A	OCR Scan	gTO10 A050D1 f25eC 71E1E37 SGS35MA050D1	PDF