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    TSD113D Search Results

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    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10

    BC338 hie hre hfe

    Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
    Text: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92


    OCR Scan     		PDF b501130 bS01130 T-03-01 BC338 hie hre hfe BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055

    NDS9933

    Abstract: Transistor c 4138 LA 4138
    Text: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.


    OCR Scan     		PDF NDS9933 bSD113D NDS9933 Transistor c 4138 LA 4138

    d45hb

    Abstract: 2N6124 mje230 D4SH11 f tip42c NJ 20 U1 W
    Text: NATL SENICOND {DISCRETE} äfi d o 0.1 s o in o in s o in o in Gì < < so 0.5 2 in o in in in CO co co co 5 15 < < •=■ 3 7 S 5 15 < < 5 15 p < 0.5 o< co D (0 <o (0 2 r-' t-* 2 co co o e X 1.5 0.5 0.15 0.15 3 1.5 0.5 o in CM* 3 1.5 0.5 1.5 0.5 0.15 P 1.5


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)


    OCR Scan     		PDF hSD113D T-39-01

    NPD8301

    Abstract: J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935
    Text: 1 This JFET Transistors NATL Material National áuá Semiconductor N-Channel JFETs Typ« No. Case Style VGS1-2 D rift G„ Gfs C|ss C ru BV R G ou CMRfl Vg» Vp Igss loss Gis GosCI-2 Iq H G 2 Process Pkg. Goss Idss •g Vos O iV /T PA) jim hos Oimho) (dB)


    OCR Scan     		PDF tSD113D 2N5515 2N5516 2N5517 2N5518 9N5519 2N5520 2N5521 2N5522 2N5523 NPD8301 J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935

    IRF520CF

    Abstract: No abstract text available
    Text: IRF520CF By IRF620CF Its IRF720CF IRF820CF IRF630CF IRF730CF 1RFP140CF IRFP141CF IRF540CF Con PF Min Max Cm (PF) Min Max 15 600 400 100 B2 2.5 15 600 300 80 B3 1.44 1.5 15 500 10Q 40 64 0.25 2.4 1 15 400 100 40 Bfe 4 0.25 0.144 8 30 800 500 150 C1 2 4 0.25


    OCR Scan     		PDF tSD113D T-39-01 IRF520CF

    1RFP140

    Abstract: 1RFP140CF IRF540CF IRF520CF IRF830CF IRF630CF
    Text: Typo NO. IRF620CF IRF720CF IRF820CF IRF630CF 9-22 IRF730CF IRF830CF 1RFP140CF IRFP141CF IRF540CF lD@ V TC= 2 5 X V o ss Min (A) • rD@ Tc = 1 0 0 T (A) VGS(th) (V) Min Id @ (mA) Max RoS(on) <«>@ Max <D (nC) Qfl Cl«, (A) Max Min <PF) M ax Co m Min (PF)


    OCR Scan     		PDF IRF520CF IRF620CF IRF720CF IRF820CF IRFS30CF IRF630CF IRF730CF IRF830CF 1RFP140CF IRFP141CF 1RFP140 IRF540CF