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Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
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TSM2N60CP
Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
TSM2N60CP
MOSFET 600V 1A
2a 400v mosfet to-251
TSM2N60CH
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25V 1A power MOSFET TO-220
Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
25V 1A power MOSFET TO-220
mosfet 600V 2A
TO-252 N-channel MOSFET
MOSFET TO-220
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18BSC
Abstract: TSM2N60 TSM2N60CH TSM2N60CP
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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Original
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TSM2N60
O-220
O-251
O-252
TSM2N60
18BSC
TSM2N60CH
TSM2N60CP
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2a 400v mosfet to-251
Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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Original
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
N-Channel mosfet 600v 1a
BRIDGE 2A 600V
MOSFET TO-220
MOSFET "CURRENT source" impedance
mosfet 600V 2A
TO-252 N-channel MOSFET
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2a 400v mosfet to-251
Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
600V 2A MOSFET N-channel
MOSFET 400V TO-220
2a 400v mosfet
marking code C5
N-Channel mosfet 600v 1a
SOT c5 87
p channel mosfet 100v
pin diagram of MOSFET
435 M dpak
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diode BY 252
Abstract: TSM2N60 TSM2N60CH TSM2N60CP
Text: TSM2N60 N-Channel Power Enhancement Mode MOSFET VDS = 600V ID = 2A RDS on , Vgs @ 10V, Ids @ 1.0A =4.4Ω Pin assignment: 1. Gate 2. Drain 3. Source General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
TSM2N60
O-252
diode BY 252
TSM2N60CH
TSM2N60CP
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SOT-252 20v
Abstract: N-Channel mosfet 600v 1a U26S 25CC TSM2N60 TSM2N60CH TSM2N60CP marking code 749 diode BBC u035
Text: $ TAIW AN TSM2N60 SEMICONDUCTOR 600V N-Channei Power MOSFET pb RoHS C O M P L IA N C E TO-251 TO-252 (DPAK) (IPAK) Jü F à P in D e f in it io n : 1. G ate 2. Drain 3. Source PRODUCT SUM M ARY V DS (V) R D S (o n )(Û ) I d (A) 6Û0 5 @ Vcs=10V 1 T 7V T
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OCR Scan
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TSM2N60
O-220
O-251
O-252
TSM2N60
SOT-252 20v
N-Channel mosfet 600v 1a
U26S
25CC
TSM2N60CH
TSM2N60CP
marking code 749
diode BBC
u035
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TSM2N60CP
Abstract: TSM2N60 TSM2N60CH 2a 400v mosfet to-251
Text: TSC TSIVI2N60 N-Channel Power Enhancement Mode MOSFET TO-251 TO-252 VDS= 600V lD = 2A Pin assignment: 1. Gate 2. Source 1 r d s fo n i’ 3. Drain 3 Vgs @ 10V, Ids @ 1.0A =4.4Q General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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OCR Scan
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PDF
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TSM2N60
O-251
O-252
TSM2N60
O-252
TSM2N60CP
TSM2N60CH
2a 400v mosfet to-251
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