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    Untitled

    Abstract: No abstract text available
    Text: TSM3454 30V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 60 @ VGS = 10V 4.5 85 @ VGS = 4.5V 3.8 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3454 OT-26 TSM3454CX6

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channel MOSFET bl RoHS CO M PLIANCE SOT-26 65 4 PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source V ds {V 30 1 23 Features RDS on)(m£2) Id (A) 60 @ VGS= 10V 4.5 85 @ Vcs= 4.5V 3.6


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6

    BL SOT26

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channei MOSFET b RoHS COMPLIANCE SOT-26 654 PRODUCT SU MMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Vos {V) Id RDS on)(m£2) (A) 60 @ VGS= 10V 4.5 85 @ Vos = 4 .5 V 3.6 30 1 23 Features


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6 BL SOT26

    TSM3454CX6

    Abstract: TSM3454 MARKING SO SOT26
    Text: E TAIW AN pb RoHS TSM3454 S E M IC O N D U C T O R 30V N-Channei MOSFET C O M P L IA N C E SOT-26 854 PRODUCT SU M M AR Y Pin Definition: 1. D ra in 2. D ra in 6. D ra in 5. D ra in 3. Gate 4. Source V ds {V) RDS(on)(m£2) I d (A) 60 @ VGS= 10V 4.5 85 @ V cs= 4.5V


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6 OT-26 TSM3454 MARKING SO SOT26