TSM55N03 Search Results

TSM55N03 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSM55N03		Taiwan Semiconductor	N-channel Enhancement Mode Mosfet		Original	PDF
TSM55N03CP		Taiwan Semiconductor	N-Channel Enhancement Mode MOSFET		Original	PDF

TSM55N03 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TSM55N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 6 @ VGS = 10V 30 9 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	TSM55N03 O-252 TSM55N03CP	PDF
TSM55N03 Abstract: TSM55N03CP 25V 55A to-252 Text: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features High Density Cell Design for Ultra Low On-Resistance	Original	TSM55N03 TSM55N03CP O-252 300uS, O-252 TSM55N03 TSM55N03CP 25V 55A to-252	PDF
Untitled Abstract: No abstract text available Text: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Features  Advanced trench process technology Fully Characterized Avalanche Voltage and Current	Original	TSM55N03 TSM55N03CP O-252 300uS, O-252	PDF
TS13002 Abstract: TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431 Text: TAIWAN SEMICONDUCTOR APPLICATION NOTE LCD TV / Monitor TV Charger Connector UPS SMPS Audio Scanner DSC Blue Tooth Printer TS1117 TS431 TS34063 TS78xx TS34063 TS494 TS78xx TS78xx TS9000 TS9006 TS34063 TS108x TS317 TS13002 TS431 TSM2N60 TS431 TS358 TS79xx TS9001	Original	TS1117 TS431 TS34063 TS78xx TS494 TS9000 TS9006 TS13002 TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431	PDF
MOSFET 55N03 Abstract: 55n03 Text: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin Definition; 1. Gate V DS V 2. Drain 3. Source 25 R os^m O ) I d (A) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2 3 Features Block Diagram ♦ Advance Trench Proce s s Tech no logy	OCR Scan	TSM55N03 O-252 TSM55N MOSFET 55N03 55n03	PDF
MOSFET 55N03 Abstract: No abstract text available Text: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin D efinition; 1. Gate 2. Drain 3. Source & V DS V R os^m O ) Id (A) 6 @ V cs = 1 û V 30 9 @ V<;s z 4.5V 30 25 1 2 3 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy	OCR Scan	TSM55N03 O-252 MOSFET 55N03	PDF
55n03 Abstract: marking 1AJ MOSFET 55N03 TSM55N03 Text: s TAIWAN TSM55N03 S E M IC O N D U C T O R 25V N-Channel MOSFET pb RoHS C O M P L IA N C E TO-252 PRODUCT SUM M ARY Pin Definition: 1. Gate V o s (V ) 2. Drain 3. Source /Ù 7 f T O %T x, 25 R os^m O ) I d (A ) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2~3	OCR Scan	TSM55N03 O-252 TSM55NÃ O-252 55n03 marking 1AJ MOSFET 55N03 TSM55N03	PDF