2SC4630LS
Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Text: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )
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OCR Scan
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T0-220FI
T0-220.
diffus-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
2SC4630LS
2SC4631LS
2SC4632LS
2SC4633LS
2SC4634LS
2SC4635LS
2SC4636LS
2SC4637LS
2SC4710LS
T0-126ML
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PDF
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IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
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OCR Scan
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SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
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PDF
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TSS0P8
Abstract: PMWD15UN PMWD16UN PMWD18UN PMWD19UN PMWD26UN PMWD30UN SC75 SC89 20031
Text: |iTrenchMOS «IfJSfflElfrilf1? Tssopsitf^ffijpg^gMosFETs f f i ^ ? I J f f l M T S S O P 8 t i s g l ^ 2 0 V ' 3 0 V F *3 ^ !lM O S F E T » fi|IJiTW|iTrenchMOSjlnnn^^JSi#M JPM s • Semiconductors M ffi^ ^ ^ T re n c h M O S ^ 'IM ’ 5pJfflfJ*ff«J > & /M is g * a ij!g
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OCR Scan
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20VfrJ30Vft
itS08
/Jn45%
PMWD26UN
PMWD16UN
PMWD15UN
PMWD30UN
PMWD19UN
PMWD18UN
PMWD32UN
TSS0P8
SC75
SC89
20031
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PDF
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varistor sem ad 222 m
Abstract: varistor 222 ste Surgector varistor Z 500 ps
Text: Overvoltage Suppression Facts V oltage T ra n s ie n ts can be d e fin e d as sho rt du ra tio n e xcu rsio n s o r surges of e le ctrica l energy. T ra n s ie n ts re sult fro m th e s ud den re le ase of pre vio u sly s to re d energy. In te rm s of e le ctrica l o r e le c tro n ic circuits, this
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OCR Scan
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SC70-6
varistor sem ad 222 m
varistor 222 ste
Surgector
varistor Z 500 ps
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PDF
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Untitled
Abstract: No abstract text available
Text: M95040 M95020, M95010 4K/2K/1K Serial SPI EEPROM with High Speed Clock and Positive Clock Strobe PRELIMINARY DATA 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for M950x0 - 2.5V to 5.5V for M950x0-W - 1,8V to 3.6V for M950x0-R
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OCR Scan
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M95040
M95020,
M95010
M950x0
M950x0-W
M950x0-R
150mil
M95040,
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PDF
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Untitled
Abstract: No abstract text available
Text: M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16 K/8 K/4 K/2 K/1 K/256 x8/x16 Serial Microwire Bus EEPROM • INDUSTRY STANDARD MICROWIRE BUS ■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: by WORD (x16) or by BYTE (x8)
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OCR Scan
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M93C86,
M93C76,
M93C66
M93C56,
M93C46,
M93C06
K/256
x8/x16)
150mil
M93Cx6
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PDF
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M24C16
Abstract: No abstract text available
Text: SGS-THOMSON . llIlMJilLIlMWDÊi M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRODUCT PREVIEW TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME
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OCR Scan
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M24C16,
M24C08
M24C04,
M24C02,
M24C01
16K/8K/4K/2K/1K
400kHz
M24Cxx
M24Cxx-W
M24Cxx-R
M24C16
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PDF
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sanyo transistor tt series
Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Text: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.
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OCR Scan
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becom-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
sanyo transistor tt series
TO225 LEAD FORMING
TRANSISTORS SANYO
sanyo transistor
SSFP package
2SB1269
2SB1449
2SB1450
2SC5264
2SC5420
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PDF
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k669 transistor
Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r
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OCR Scan
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250mm
Ratings/Ta-25
2SK2170UA)
2SK1069
2SK1332CV)
2SK209KH)
2SK2219CD)
T0-126LP
T0-220CI
T0-220ML
k669 transistor
k544
K932 transistor
mosfet k544
k427 transistor
k583
k427
K932
k222 mosfet
k546
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PDF
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C4106 transistor
Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower
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OCR Scan
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T0-220MF
O-220
Ratings/Ta-25
T0-220)
2SB1267
2SD1903
D1235
2SB1268
2SD1904
C4106 transistor
C4106
transistor c3457
B824 transistor
c4106 semiconductor
transistor c3447
transistor c4106
transistor d1061
D1060
d1061
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PDF
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N and P MOSFET
Abstract: No abstract text available
Text: # GF2918 Dual N-Channel Enhancement-Mode MOSFET V d s 30V R d S ON 18m£2 I d 7.8A Mechanical Data Features Case: SO-8 molded plastic body • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance Terminals: Leads solderable per MIL-STD-750,
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OCR Scan
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GF2918
MIL-STD-750,
N and P MOSFET
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PDF
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SPD221P
Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).
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OCR Scan
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SGD102,
SGD102T)
Ratings-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
SPD221P
SPD221R
sanyo transistor
SGD102
SGD102T
SPD121
MCP6 Marking sanyo
SPD121P
SPD122P
SPD221
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PDF
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2SK2437
Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process
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OCR Scan
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MT980624TR
2SK2437
CPH3304
mosfet marking kf
78m marking
2SK2442
48M marking
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PDF
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M34W
Abstract: No abstract text available
Text: /= T S G S -T H O M S O N M34W02 2Kbit Serial EEPROM with Software Data Protection PRELIMINARY DATA TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34W02
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OCR Scan
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M34W02
400kHz
M34W02
M34W02-W
M34W02-R
150mil
169mil
M34W
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M34C02 llllMJilLliMWIiei 2K SERIAL EEPROM for DIMM SERIAL PRESENCE DETECT PRELIMINARY DATA TW O WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02
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OCR Scan
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M34C02
400kHz
M34C02-W
M34C02-R
M34C02
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PDF
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Untitled
Abstract: No abstract text available
Text: M34C02 2 Kbit Serial EEPROM for DIMM Serial Presence Detect • TWO WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02 - 2.5V to 5.5V for M34C02-W
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OCR Scan
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M34C02
400kHz
M34C02-W
M34C02-R
150mil
169mil
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PDF
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Untitled
Abstract: No abstract text available
Text: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.
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OCR Scan
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T0-220AB,
SC-45
T0-220AA)
T0-220FIÃ
LSXSC-67^
OT-189
weight-Og186,
T0-220MF
SC-65,
O-218)
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PDF
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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OCR Scan
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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PDF
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2SC3253
Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Text: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t
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OCR Scan
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TQ-220,
2SB1267
2SD1903
T0-220MF
2SB919
2SD1235
T0-220
2SB903
2SD1212
2SB1467
2SC3253
2SD1212
2SD2218
SC74
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PDF
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2SA1829
Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
Text: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.
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OCR Scan
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2SC2857
oin50
2SA1689/2SC4449
2SC5291
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
2SA1829
2SC3790
p7060
T0-126ML
2SA1371
2SC4732
e1aj
SANYO CP5
transistor 2sc3788
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PDF
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2SD1213
Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .
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OCR Scan
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2SB904
2SD1213
2SB1511
2SD2285
0V/60V
2SB827
2SD-126
T0-126LP
T0-220CI
T0-220ML
e1aj
2SB828
2SB829
2SD1063
2SD1064
2SD1065
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PDF
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24C02 wp st
Abstract: 24C04M M24C16
Text: 7 SGS -THOMSON M24ci 6, M24C08 » KfflDMILKÊTMDfèi M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRELIMINARY DATA • TW O WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRrTE CYCLES ■ 40 YEARS DATA RETENTION ■ 2ms TYPICAL PROGRAMMING TIME
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OCR Scan
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M24ci
24C08
24C04,
24C02,
16K/8K/4K/2K/1K
400kHz
M24Cxx
M24Cxx-W
M24Cxx-R
M24C16/C08/C04/C02/C01
24C02 wp st
24C04M
M24C16
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PDF
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m9661
Abstract: M9625 M96320-R ufdfpn8 M96256-R M96M01 M9505 m9612 M96160-W M9632
Text: SPI ÍÍÍE E P R O M £ $ Storage Generic Part Number Cepaclty Automotive Serial Interface Orad» Spec KB) M96M01-R 1000 Supply Vottag« (Voc) 8upply Voltage (Voc) Clook Frequency (fS C l) M in (V) M ex(V) Max (MHz) SPI - 1.8 5.5 5 Paokege SO 08 WIDE.208 (EIAJ); S08: WLCSP-R5
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OCR Scan
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M96M01-R
M95M01-W
5512-OR
M05512-R
M96612-W
M95256
M96256-R
M96266-W
M96128
M96128-R
m9661
M9625
M96320-R
ufdfpn8
M96M01
M9505
m9612
M96160-W
M9632
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PDF
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2sc4105
Abstract: 2SC4427 2SC4106 2SC4107 2SC4160 2SC4161 2SC4162 2SC4163 2SC4164 2SC4219
Text: SWITC H I N G POWER TRANSISTOR SERIES Na2 F e a t u r e s ♦ S h o r t s w i t c h i n g time ♦ High breakdown voltage ♦ Wide ASO ♦ H i g h r e l i a b i l i t y b e c a u s e of p l a n a r ¿ate H i g h — S p e e d 'I'ype U s e * Swit c h i n g regulators
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OCR Scan
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2SC4219
2SC4220
T0-220
2SC4105
2SC4106
2SC4107
2SC4164
T0-220
2SC4160
2SC4161
2SC4427
2SC4162
2SC4163
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PDF
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