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    U1N50 Search Results

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    U1N50 Price and Stock

    onsemi SSU1N50BTU

    MOSFET N-CH 520V 1.3A IPAK
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    DigiKey SSU1N50BTU Tube
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    Avnet Silica SSU1N50BTU 17 Weeks 70
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    Flip Electronics SSU1N50BTU 9,997
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    Rochester Electronics LLC SSU1N50BTU

    1.3A, 520V, 5.3OHM, N-CHANNEL,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSU1N50BTU Bulk 792
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    Fairchild Semiconductor Corporation FQU1N50TU

    1.1A, 500V, 9ohm, N-Channel Power MOSFET, TO-251 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FQU1N50TU 1,212 1
    • 1 $0.1733
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    Fairchild Semiconductor Corporation SSU1N50BTU

    SSU1N50 - Power Field-Effect Transistor, 1.3A, 520V, 5.3ohm, N-Channel, MOSFET, TO-251 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics SSU1N50BTU 55,440 1
    • 1 $0.3646
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    • 100 $0.3427
    • 1000 $0.3099
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    U1N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SSR/U1N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 5.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 500V


    Original     		SSR/U1N50A PDF

    U420B

    Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
    Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary


    Original     		Power247TM, U420B IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast PDF

    SSR -40 DD

    Abstract: power mosfet j 162 MOSFET SSR
    Text: SSR/U1N50A Advanced Power MOSFET FEATURES BVDss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance ■ Improved Gate Charge _P ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ■ Lower RDS{oN) : 4.046 £2 (Typ.)


    OCR Scan     		SSR/U1N50A SSR -40 DD power mosfet j 162 MOSFET SSR PDF

    Untitled

    Abstract: No abstract text available
    Text: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V


    OCR Scan     		SSR/U1N50A PDF

    SSR -40 DD

    Abstract: No abstract text available
    Text: SSR/U1N50A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ VDS= 500V


    OCR Scan     		SSR/U1N50A 1N50A SSR -40 DD PDF

    on 4046

    Abstract: No abstract text available
    Text: Advanced SSR/U1N50A P o w e r MOSFET FEATURES BV DSS = 5 0 0 V • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n lD ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 nA (M ax.) @ V DS = 500V


    OCR Scan     		SSR/U1N50A on 4046 PDF

    SSR -100 DD

    Abstract: SSR -25 DD
    Text: Advanced SSR/U1N50A Power MOSFET FEATURES BVDSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ V DS = 500V


    OCR Scan     		SSR/U1N50A SSR -100 DD SSR -25 DD PDF

    1N45

    Abstract: Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50
    Text: SSR1N50/45 U1N50/45 N-CHANNEL POWER MOSFET FEATURE • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		SSR1N50/45 SSU1N50/45 SSR1N50/U1N50 SSR1N45/U1N45 SSR1N50/1N45 SSU1N50/1N45 widths300, 7Tb4142 1N45 Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50 PDF