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U3110ZPBF Price and Stock

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Infineon Technologies AG IRLU3110ZPBF MOSFET N-CH 100V 42A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRLU3110ZPBF	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $0.7445	Buy Now
Newark	IRLU3110ZPBF	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	IRLU3110ZPBF	Bulk			5	1 - 10 $1.92 100 $1.81 1000 $1.62 10000 $1.62	Get Quote
Rochester Electronics	IRLU3110ZPBF		14,783		1	1 $0.8272 10 $0.8272 100 $0.7776 1000 $0.7031 10000 $0.7031	Buy Now
TME	IRLU3110ZPBF		151		1	1 $1.89 10 $1.06 100 $1 1000 $0.89 10000 $0.86	Buy Now

Chip One Stop	IRLU3110ZPBF	Tube	2,976			1 $2.2 10 $1.57 100 $0.866 1000 $0.713 10000 $0.663	Buy Now
International Rectifier IRLU3110ZPBF HEXFET Power MOSFET Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRLU3110ZPBF		228			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others IRLU3110ZPBF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip-Germany GmbH	IRLU3110ZPBF		3,212			1 - 10 - 100 - 1000 - 10000 -	Get Quote

U3110ZPBF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ISD 1820 P Abstract: irlr3110 Text: PD - 97175B IRLR3110ZPbF U3110ZPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ G Description	Original	97175B IRLR3110ZPbF IRLU3110ZPbF ISD 1820 P irlr3110	PDF
Untitled Abstract: No abstract text available Text: PD - 97175B IRLR3110ZPbF U3110ZPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ G Description	Original	97175B IRLR3110ZPbF IRLU3110ZPbF	PDF
AN-1005 Abstract: ISD 1820 P Text: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ	Original	7175A IRLR3110ZPbF IRLU3110ZPbF AN-1005 ISD 1820 P	PDF
IRLR3110ZPBF Abstract: U3110ZPbF IRLU3110 ISD 1820 IRLR3110Z IRLU3110ZPBF AN-1005 U3110 Text: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ	Original	7175A IRLR3110ZPbF IRLU3110ZPbF IRLR3110ZPBF U3110ZPbF IRLU3110 ISD 1820 IRLR3110Z IRLU3110ZPBF AN-1005 U3110	PDF
Untitled Abstract: No abstract text available Text: PD - 97175 AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ	Original	IRLR3110ZPbF IRLU3110ZPbF	PDF