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    U9130 Search Results

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    U9130 Price and Stock

    Rochester Electronics LLC SFU9130TU

    P-CHANNEL POWER MOSFET
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    DigiKey SFU9130TU Bulk 919
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    • 1000 $0.33
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    Fairchild Semiconductor Corporation SFU9130TU

    9.8A, 100V, 0.3ohm, P-Channel Power MOSFET, TO-251 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics SFU9130TU 5,040 1
    • 1 $0.3142
    • 10 $0.3142
    • 100 $0.2953
    • 1000 $0.2671
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    Fairchild Semiconductor Corporation SFRU9130

    FCH SFRU9130
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    ES Components SFRU9130 15
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    U9130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V


    Original
    PDF -100V SFR/U9130 SFU9130TU O-251

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 0.3 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V


    Original
    PDF SFR/U9130 -100V

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V


    Original
    PDF SFR/U9130 -100V

    d7810

    Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED


    Original
    PDF M78-DVT d7810 L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269

    r4363

    Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED


    Original
    PDF M72-DVT 03/0m72 r4363 L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013

    Untitled

    Abstract: No abstract text available
    Text: Advanced SFR/U9130 P o w e r MOSFET FEATURES BVDSS — -100 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = -9.8 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


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    PDF SFR/U9130 -100V

    U9130

    Abstract: diode 98A G39A
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVqss = "100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 0 -3 ß ■ Lower Input Capacitance lD = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V


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    PDF SFR/U9130 -100V 7Tb4142 8Z694- U9130 diode 98A G39A

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V


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    PDF SFR/U9130 -100V

    diode AR S1 98

    Abstract: No abstract text available
    Text: SFR/U9130 A dvanced Pow er MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V


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    PDF -100V SFR/U9130 diode AR S1 98

    TL0251

    Abstract: hp 3101 LD-105VR LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR
    Text: -44T .,= 25’C 1 f* * e ft ï 1 « fi & * L D -105V R o - A m t L D -2Q W R 650 650 LD -404V R m 650 L D -602V R m 650 vF ;m A ì <V i i m i : 10 2 .0 ¡0 1.6 4 10 2 .0 \0 4 IO 2 .0 10 ftlf-ìS * vkff; 20 3 •'C -2 5 -7 5 17 2 .5 x 5 . 0 20 3 -2 5 -8 5 —2 5 — "5


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    PDF LD-105VR LD-404VR 10x10 LD-602VR LD-603VR LD-701VR LD-702VR LD-706VR 13x18 LD1203VR TL0251 hp 3101 LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR