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    ufnd110

    Abstract: ufnd112
    Text: POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For A utom atic Insertion • C ompact, End Stackable • Fast Sw itching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Tem perature S tability DESCRIPTION


    OCR Scan     		UFND110 UFND113 ufnd110 ufnd112 PDF

    ufnd110

    Abstract: T3535
    Text: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled


    OCR Scan     		Gia717 UFND110 UFND113 T3535 PDF