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    NEC Electronics Group UG54W6624GT6G-6

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    Bristol Electronics UG54W6624GT6G-6 20
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    UG54W662 Datasheets Context Search

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    Abstract: No abstract text available
    Text: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in


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    PDF UG54W662 168Pin 300mil 168-pin 350Max 89Max 540Min) 100Min

    Untitled

    Abstract: No abstract text available
    Text: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in


    Original
    PDF UG54W662 168Pin 300mil 168-pin 540Min) 120Max 05Max) 010Max

    Untitled

    Abstract: No abstract text available
    Text: UG54W6624GJ T G-6XC Data sheets can be downloaded at www.unigen.com 32M Bytes (4M x 64 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered DIMM based on 16 pcs 4M x 4 DRAM with LVTTL, 2K Refresh PIN ASSIGNMENT (Front View) 168-Pin DIMM FEATURES Pr el im in ar y


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    PDF UG54W6624GJ 1000mil) 168-Pin 118DIA