UGF09030P Search Results

UGF09030P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UGF09030P		Cree	FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF09030P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UGF09030P Abstract: UGF09030F 110MIL Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF09030 800MHz 1000MHz. MRF9030 26VDC, 945MHz, UGF09030F 400mA 940MHz IS-97 UGF09030P UGF09030F 110MIL	PDF
Untitled Abstract: No abstract text available Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030	PDF
Untitled Abstract: No abstract text available Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF09030F UGF09030	PDF
cree MOS Abstract: MRF9030 UGF09030 UGF09030P UGF9030F UGF9030P Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030 cree MOS MRF9030 UGF09030P UGF9030F UGF9030P	PDF