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    UPF2010 Search Results

    UPF2010 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF2010 Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2010 Cree Ldmos Fets in Class ab Operation 1800 MHZ Cellular Original PDF
    UPF2010-178 Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2010F Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF2010F Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2010P Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF2010P Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF

    UPF2010 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UPF2010F

    Abstract: ultrarf UPF2010 UPF2010P
    Text: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		UPF2010 30dBc UPF2010F UPF2010P UPF2010F ultrarf UPF2010 UPF2010P PDF

    UPF2010

    Abstract: 1103AM package type 440109
    Text: URFDB Sec 08_2010 11/3/99 11:03 AM Page 8-1 UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA,


    Original     		UPF2010 30dBc UPF2010 1103AM package type 440109 PDF

    UPF2010-178

    Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109
    Text: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UPF2010 30dBc UPF2010F UPF2010P UPF20AP 100UF 125MW, UPF2010 UPF2010F UPF2010-178 Cree Microwave upf2010 AC DC 10w 47PF UPF2010P J033 package type 440109 PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b PDF