Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UTXQ512 Search Results

    UTXQ512 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UTXQ512 Aeroflex CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M x 1 SRAM Original PDF

    UTXQ512 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JORDAN

    Abstract: UT8Q512 SRAM flatpack SRAM TTL UT7Q512 UT9Q512 UTXQ512
    Text: UTXQ512 SRAM Product Overview Anthony Jordan Standard Product Line Manager UTMC Microelectronic Systems 719-594-8252, [email protected] www.utmc.com Updated January 2000 UTXQ512 SRAM • 4Mbit density – Organized 512K x 8 – 100ns X=7 and 25ns (X=8 or X=9) access time, asynchronous


    Original     		UTXQ512 100ns 100ns, 100ns 128MeV-cm2/mg Co-60 JORDAN UT8Q512 SRAM flatpack SRAM TTL UT7Q512 UT9Q512 PDF

    D4 SMD

    Abstract: UT7Q512 UT8Q512 UT9Q512 UTXQ512
    Text: UTXQ512 SRAM Frequently Asked Questions Introduction: The UTXQ512 are high-performance CMOS asynchronous static RAMs organized as 512K words by 8 bits. The following are questions frequently asked regarding these devices. Detailed information on these devices can be found in the UTXQ512


    Original     		UTXQ512 UTXQ512 100ns) UT7Q512 250mils 430mils 32-lead UT8Q512 D4 SMD UT9Q512 PDF

    Memories

    Abstract: UT54ACS244 UT54ACS151 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541 UT9Q512
    Text: Aeroflex UTMC Application Note UTXQ512-AN-000 _ CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM This application note describes how to use two UT9Q512 4M SRAMs and one UT54ACS151 logic device


    Original     		UTXQ512-AN-000 UT9Q512 UT54ACS151 UT54ACS151 Memories UT54ACS244 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541 PDF