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    Untitled

    Abstract: No abstract text available
    Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable


    Original
    NVMFS5830NL NVMFS5830NL/D PDF

    V5830L

    Abstract: No abstract text available
    Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable


    Original
    NVMFS5830NL AEC-Q101 NVMFS5830NL/D V5830L PDF

    V5830L

    Abstract: No abstract text available
    Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable


    Original
    NVMFS5830NL AEC-Q101 NVMFS5830NL/D V5830L PDF

    Untitled

    Abstract: No abstract text available
    Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product


    Original
    NVMFS5830NL NVMFS5830NLWF NVMFS5830NL/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product


    Original
    NVMFS5830NL NVMFS5830NLWF AEC-Q101 NVMFS5830NL/D PDF