ALD2721E
Abstract: ALD2726 ALD2726E ALD2721
Text: ADVANCED LINEAR DEVICES, INC. ALD2726E/ALD2726 DUAL EPAD ULTRA MICROPOWER OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • EPAD Electrically Programmable Analog Device • User programmable VOS trimmer • Computer-assisted trimming • Rail-to-rail input/output
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ALD2726E/ALD2726
ALD2721E
ALD2726
ALD2726E
ALD2721
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD2726E/ALD2726 DUAL EPAD® ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures
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ALD2726E/ALD2726
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ALD2726E
Abstract: ALD2726EPB ALD2726PB ALD2726 Advanced Linear Devices ALD2726DB ALD2726EDB ALD2726ESB ALD2726SB
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD2726E/ALD2726 DUAL EPAD® ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures
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ALD2726E/ALD2726
ALD2726E
ALD2726EPB
ALD2726PB
ALD2726
Advanced Linear Devices
ALD2726DB
ALD2726EDB
ALD2726ESB
ALD2726SB
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SMA5101
Abstract: RF Double Balanced Mixer
Text: SMA5101 Ordering number : ENA1839 SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm
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SMA5101
ENA1839
20dBm
450MHz)
A1839-5/5
SMA5101
RF Double Balanced Mixer
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Untitled
Abstract: No abstract text available
Text: SMA5101 Ordering number : ENA1839A SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm
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SMA5101
ENA1839A
20dBm
450MHz)
A1839-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1839A SMA5101 MMIC http://onsemi.com Mixer, IIP3=15dBm, Gc=-0.5dB@450MHz, MCPH6 Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm • • • High conversion gain : -0.5dB (@450MHz)
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ENA1839A
SMA5101
15dBm,
450MHz,
20dBm
450MHz)
A1839-7/7
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ALD2724
Abstract: ALD2724E ALD2724EPB ALD2724PB ALD2724DB ALD2724EDB ALD2724ESB ALD2724SB 2724e VE2b
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD2724E/ALD2724 DUAL EPAD® PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER BENEFITS KEY FEATURES • • • • • • • • • • • • Factory pre-trimmed VOS VOS=25µV @ IOS=0.01pA 5V/µs slew rate
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ALD2724E/ALD2724
ALD2724E/ALD2724
ALD2724
ALD2724E
ALD2724EPB
ALD2724PB
ALD2724DB
ALD2724EDB
ALD2724ESB
ALD2724SB
2724e
VE2b
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bm10
Abstract: A1839
Text: SMA5101 Ordering number : ENA1839A SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm
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ENA1839A
SMA5101
20dBm
450MHz)
A1839-7/7
bm10
A1839
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD2722E/ALD2722 DUAL EPAD® LOW POWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures
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ALD2722E/ALD2722
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD2721E/ALD2721 DUAL EPAD® MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures • Remote controlled automated trimming
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ALD2721E/ALD2721
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ALD2722E
Abstract: ALD2724 ALD2724E 2724e jfet common drain buffer amplifier
Text: ADVANCED LINEAR DEVICES, INC. ALD2724E/ALD2724 DUAL EPAD PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • Ready to use off the shelf standard part • Custom automated trimming optional • Remote controlled automated trimming
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ALD2724E/ALD2724
ALD2722E
ALD2724
ALD2724E
2724e
jfet common drain buffer amplifier
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ALD2721
Abstract: ALD2721E ALD2721EPB ALD2721PB Advanced Linear Devices ALD2721DB ALD2721EDB ALD2721ESB ALD2721SB
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD2721E/ALD2721 DUAL EPAD® MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • • • • • • • • • • • • • Eliminates manual and elaborate system trimming procedures • Remote controlled automated trimming
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ALD2721E/ALD2721
ALD2721
ALD2721E
ALD2721EPB
ALD2721PB
Advanced Linear Devices
ALD2721DB
ALD2721EDB
ALD2721ESB
ALD2721SB
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AN-1153
Abstract: No abstract text available
Text: National Semiconductor Application Note 1153 Thinh Ha February 2002 ABSTRACT This application note describes the COP8 Virtual E2 Methodology. Emulated E2 allows the programmer to treat flash memory as if it were E2. validity of the ISP Address and the BYTECOUNTHI register.
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Untitled
Abstract: No abstract text available
Text: SMA5101 Ordering number : ENA1839 SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm
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SMA5101
ENA1839
20dBm
450MHz)
A1839-5/5
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD2724E/ALD2724 DUAL EPAD® PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER BENEFITS KEY FEATURES • • • • • • • • • • • • Factory pre-trimmed VOS VOS=25µV @ IOS=0.01pA 5V/µs slew rate
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ALD2724E/ALD2724
ALD2724E/AL
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db opera 415
Abstract: ALD2721 ALD2721E
Text: ADVANCED LINEAR DEVICES, INC. ALD2721E/ALD2721 DUAL EPAD MICROPOWER OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • EPAD Electrically Programmable Analog Device • User programmable VOS trimmer • Computer-assisted trimming • Rail-to-rail input/output
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ALD2721E/ALD2721
db opera 415
ALD2721
ALD2721E
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2N998
Abstract: 2N2723 CB10
Text: MGTORCLA SC XSTRS/R F 12E Sym bol Value Unit VCE20 60 Vde Collector-Base Voltage VcB1 80 Vdc Emitter-Base Voltage VE2B1 12 Vdc Collector Current — Continuous ic 40 Adc Total Device Dissipation @ Ta =- 25°C Derate above 25°C PO 0.5 2.9 Watt mW/°C Total Device Dissipation @ T c = 25°C
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b3L72S4
VCE20
2N2723
O-206AF)
2N998
2N2723
CB10
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CE020
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D | Sym bol Value Unit VCE20 40 Vdc Collector-Base Voltage VC B 1 0 60 Vdc Emitter-Base Voltage Pin 4 to Pin 2 VE2B10 15 7.5 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 26°C Derate above 25°C
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VCE20
VE2B10
CE020
CB010
E2B010
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Untitled
Abstract: No abstract text available
Text: Advanced I / I 1 I ^ ^¡ZS/ L in e a r ALD2722E/ALD2722 D e v ic e s , Inc. DUAL EPAD OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • 5V single supply operation • EPAD Electrically Programmable Analog Device • User programmable Vos trimmer • Computer-assisted trimming
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ALD2722E/ALD2722
ALD27222E/ALD2722
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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3N74
Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper
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MIL-S-19500/390
TX3N75,
TX3N76,
3N127,
TX3N127
3N74-76
3N127
3N127
3N74
TRANSISTOR MARKING A53
3N75
transistor 3N74
Z933
3N7A-76
3N76
3N75 JAN
3K76
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cl4001
Abstract: No abstract text available
Text: r r r ^ | / | advanced 1 L in e a r ALD2726E/ALD2726 D e v ic e s , I n c . DUAL EPA D ULTRA MICROPOWER OPERATIONAL AMPLIFIER K EY F E A T U R E S B E N E F IT S • • • • • • • • • • • • • E P A D Electrically Programmable Analog Device
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ALD2726E/ALD2726
cl4001
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2N3303
Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any
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Chiana56
2N3303
T1S57
RJh 3347
2N3680
LA 4301
transistor ITT 2907
2N3792
2N3574
BF173
transistor bf 175
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Untitled
Abstract: No abstract text available
Text: P T T N I / I | L ± S A dvanced 1 L in e a r / D e v ic e s , I n c . ALD2721E/ALD2721 DUAL EPAD MICROFOWER OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • EPAD Electrically Programmable Analog Device • User programmable V os trimmer • Computer-assisted trimming
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ALD2721E/ALD2721
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