SGS-Thomson mosfet ipak
Abstract: No abstract text available
Text: f » • * /# SGS-THOMSON M<eœiliOTI!»!]0 § VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 V NP5N 07FI VNK5N07FM Velamp 70 70 70 70 V V V V Ros ony 0.2 n 0.2 i i 0.2 n 0.2 a llim 5 5 5 5 A A A A
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VND5N07/VND5N07-1
VNP5N07FI/K5N07FM
VND5N07
VND5N07-1
VNK5N07FM
VND5N07,
VND5N07-1,
VNP5N07FI
SGS-Thomson mosfet ipak
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SGS-Thomson mosfet
Abstract: No abstract text available
Text: H Z! SGS-THOMSON ESII lS@IILICTi B!lllGi VNH100N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE Velamp RoS on him VN H 100N 04 42 V 0 .0 1 2 n 100 A . • ■ . ■ . ■ . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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VNH100N04
O-218
O-218
VNH100N04
SGS-Thomson mosfet
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35N07
Abstract: diode 1ss VNP35N VNV35N07
Text: £mm I O T H O M IQ H m tim W Hïïm m cs VNP35N07FI VNB35N07/VNV35N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP35N 07FI V N B 35N 07 VN V35N 07 Velamp RDS on him 70 V 70 V 70 V 0 .0 2 8 Î2 0 .0 2 8 n 0 .028 n 35 A 35 A 35 A • ■ . ■
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OCR Scan
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VNP35N07FI
VNB35N07/VNV35N07
VNP35N
VNP35N07FI,
VNB35N07
VNV35N07
1996SGS-THOMSON
35N07
diode 1ss
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VNF35N07
Abstract: VNP35N07
Text: i ~ t o r m m w ir c iw RfflD E § ILiCTia@ilOei VNP35N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP35N07 . . • . . . . . . . Velamp RDS(on) him 70 V 0.028 £2 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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OCR Scan
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VNP35N07
VNP35N07
O-220
VNF35N07
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BUW90
Abstract: LE17
Text: JUL 0 6 1988 i 37E D SEMELAB LTD • Ô1331fi7 QQOOSDb G SEMELAB BUW90 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation MECHANICAL DATA Dimensions in mm FEATURES
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000020b
BUW90
100cC
10CTC
0-25mH
LE17
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VELAMP
Abstract: BUF642
Text: Te m ic BUF642 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le-sW itch-O ff T ransistor SW O T • HIGH SPEED technology • Planarpassivation • 100 kH z sw itching rate • Very low sw itching losses •
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BUF642
VELAMP
BUF642
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BUW91
Abstract: 0DG02 LE17
Text: SENELAB LTD 3 7E J UL 0 6 1988 A1331A7 D 5EMELAB BUW 91 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation M EC H A N IC A L DATA Dim ensionsin mm FEATURES • LOW VCE SAT
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OCR Scan
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0DG020Ã
BUW91
curre27f!
1003C
300ns
BUW91
0DG02
LE17
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g 13003
Abstract: LM 13003
Text: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa
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OCR Scan
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T/13003
SGS13002,
SGS13003
OT-82
SGS13002T,
SGS13003T
MJE13002
O-126,
SGS13002
g 13003
LM 13003
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LS400
Abstract: bu931t
Text: Hji BU931T BUB931T SGS-THOMSON EfóDO E^@H[LO HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . SURFACE-MOUNTING D2PAK TO-263 POWER PACKAGE IN TUBE (NO SUFFIX)
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OCR Scan
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BU931T
BUB931T
O-263)
O-220
O-263
BU931T/BUB931T
LS400
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