Featured Product - FRED Pt
Abstract: automotive ecu diesel ultrafast diodes
Text: Featured Product - FRED Pt Series www.vishay.com Vishay Semiconductors FRED Pt® Series 200 V to 600 V, TJ max. 175 °C: Flexible Ultrafast Platform for Power Supplies and Inverters The Vishay Semiconductors FRED Pt® Gen1 and Gen2 series of ultrafast diodes offers designers a highly flexible
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O-262)
O-247AC
26-Jul-12
Featured Product - FRED Pt
automotive ecu diesel
ultrafast diodes
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MBRB30H100
Abstract: MBRB10H90 MBRF10H90
Text: MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series Vishay Semiconductors New Product formerly General Semiconductor High-Voltage Dual Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 30A Maximum TJ 175°C ITO-220AB MBRF30H90CT, MBRF30H100CT 0.188 (4.77)
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MBR30H100CT,
MBRF30H100CT
MBRB30H100CT
ITO-220AB
MBRF30H90CT,
MBRF30H100CT)
O-220AB
MBR30H90CT,
MBR30H100CT)
16-Jan-03
MBRB30H100
MBRB10H90
MBRF10H90
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Dual Schottky Rectifiers
Abstract: MBR30H100CT
Text: MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series Vishay Semiconductors New Product formerly General Semiconductor High-Voltage Dual Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 30A Maximum TJ 175°C ITO-220AB MBRF30H90CT, MBRF30H100CT 0.188 (4.77)
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MBR30H100CT,
MBRF30H100CT
MBRB30H100CT
ITO-220AB
MBRF30H90CT,
MBRF30H100CT)
O-220AB
MBR30H90CT,
MBR30H100CT)
08-Apr-05
Dual Schottky Rectifiers
MBR30H100CT
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MBRB30H100CT
Abstract: MBRB30H90CT MBRF30H100CT MBRF30H90CT MBR30H100CT MBR30H90CT
Text: MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series Vishay Semiconductors New Product formerly General Semiconductor High-Voltage Dual Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 30A Maximum TJ 175°C ITO-220AB MBRF30H90CT, MBRF30H100CT 0.188 (4.77)
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MBR30H100CT,
MBRF30H100CT
MBRB30H100CT
ITO-220AB
MBRF30H90CT,
MBRF30H100CT)
O-220AB
MBR30H90CT,
MBR30H100CT)
32erse
MBRB30H90CT
MBRF30H100CT
MBRF30H90CT
MBR30H100CT
MBR30H90CT
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SIHF18N50D
Abstract: No abstract text available
Text: SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHF18N50D
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SIHF8N50D
Abstract: No abstract text available
Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHF8N50D
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness
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SiHD3N50DA
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHD3N50D
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHG22N50D
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF740B
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHP14N50D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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nc 1458
Abstract: MA 1458 SIHG32N50D-GE3
Text: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHG32N50D
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
nc 1458
MA 1458
SIHG32N50D-GE3
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Untitled
Abstract: No abstract text available
Text: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF830B
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHP25N40D
O-220AB
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHG22N50D
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF740B
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SIHF6N40D-E3
Abstract: No abstract text available
Text: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHF6N40D
O-220
2011/65/EU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIHF6N40D-E3
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Untitled
Abstract: No abstract text available
Text: SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHF18N50D
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHS36N50D
Super-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRF730BPBF
Abstract: No abstract text available
Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF730B
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF730BPBF
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Untitled
Abstract: No abstract text available
Text: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF840B
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF730B
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRF840B
Abstract: IRF840B free
Text: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF840B
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF840B
IRF840B free
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kje vishay
Abstract: bav99 vishay marking kje
Text: BAV99_ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast switching speed • High conductance • Surface mount package automatic insertion • Connected in series ideally suited for Absolute Maximum Ratings Tj = 25°C
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OCR Scan
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PDF
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BAV99_
50MHz,
10mmx8mmx0
17-Mar-99
OT-23
IL-STD-202,
kje vishay
bav99 vishay
marking kje
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