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    W981216 Price and Stock

    Winbond Electronics Corp W981216AH75

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    Bristol Electronics W981216AH75 41
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    Winbond Electronics Corp W981216BH-75

    IC,SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components W981216BH-75 49
    • 1 $3.36
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    WIN W981216AH75

    Electronic Component
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    ComSIT USA W981216AH75 3
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    W981216 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    W981216 Winbond Electronics 2M x 4 BANKS x 16 BIT SDRAM Original PDF
    W981216AH Winbond Electronics 2M x 16 bit x 4 Banks SDRAM Original PDF
    W981216AH-75 Winbond Electronics 2M x 16 bit x 4 Banks SDRAM Original PDF
    W981216AH-75G Winbond Electronics IC DRAM CHIP SDRAM 128MBIT 3.3V 54TSOPII Original PDF
    W981216AH-75L Winbond Electronics DRAM Chip, SDRAM, 32MByte, 3.3V Supply, Commercial, TSOP II, 54-Pin Original PDF
    W981216AH-75LG Winbond Electronics DRAM Chip: SDRAM: 32MByte: 3.3V Supply: Commercial: TSOP II: 54-Pin Original PDF
    W981216AH-8H Winbond Electronics 2M x 16 bit x 4 Banks SDRAM Original PDF
    W981216AH-8HG Winbond Electronics IC DRAM CHIP SDRAM 128MBIT 3.3V 54TSOPII Original PDF
    W981216BH Winbond Electronics 2M x 4 Banks x 16 Bit SDRAM Original PDF
    W981216BH-6 Winbond Electronics SDRAM Original PDF
    W981216BH-7 Winbond Electronics 2M x 4 BANKS x 16 BIT SDRAM Original PDF
    W981216BH-7 Winbond Electronics DRAM Chip, SDRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 54-Pin Original PDF
    W981216BH-75 Winbond Electronics DRAM Chip, SDRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 54-Pin Original PDF
    W981216BH-75 Winbond Electronics 2M x 4 BANKS x 16 BIT SDRAM Original PDF
    W981216BH-75G Winbond Electronics IC DRAM CHIP SDRAM 128MBIT 3.3V 54TSOPII TUBE Original PDF
    W981216BH-75I Winbond Electronics Industrial SDRAM Original PDF
    W981216BH-75L Winbond Electronics DRAM Chip, SDRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 54-Pin Original PDF
    W981216BH-75L Winbond Electronics Low Power SDRAM Original PDF
    W981216BH-75LG Winbond Electronics IC DRAM CHIP SDRAM 128MBIT 3.3V 54TSOPII TUBE Original PDF
    W981216BH-7G Winbond Electronics IC DRAM CHIP SDRAM 128MBIT 3.3V 54TSOPII TUBE Original PDF

    W981216 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: W981216AH 2M x 16 bit x 4 Banks SDRAM Features • • • • • • • • • • • • • 3.3V±0.3V power supply Up to 133 MHz clock frequency 2,097,152 words x 4 banks x 16 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: 1, 2, 4, 8 , and full page


    Original     		W981216AH W981216AH PDF

    W981216BH

    Abstract: W981216BH-7 W981216BH-75 W981216BH-8H
    Text: W981216BH 2M x 4 BANKS × 16 BIT SDRAM GENERAL DESCRIPTION W981216BH is a high-speed synchronous dynamic random access memory SDRAM , organized as 2M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W981216BH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the


    Original     		W981216BH W981216BH PC133/CL2 PC133/CL3 PC100/CL2 W981216BH-7 W981216BH-75 W981216BH-8H PDF

    W981216BH-75

    Abstract: W981216BH W981216BH-6 W981216BH-7
    Text: W981216BH 2M x 4 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION .3 2. FEATURES .3


    Original     		W981216BH W981216BH-75 W981216BH W981216BH-6 W981216BH-7 PDF

    W981216BH

    Abstract: No abstract text available
    Text: W981216BH 2M x 4 BANKS × 16 BIT SDRAM GENERAL DESCRIPTION W981216BH is a high-speed synchronous dynamic random access memory SDRAM , organized as 2M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µ m process technology, W981216BH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the


    Original     		W981216BH W981216BH PC133/CL2 PC133/CL3 PC100/CL2 PDF

    W981216AH

    Abstract: W981216
    Text: W981216AH 2M x 16 bit x 4 Banks SDRAM Features • • • • • • • • • • • • • 3.3V±0.3V power supply Up to 133 MHz clock frequency 2,097,152 words x 4 banks x 16 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: 1, 2, 4, 8 , and full page


    Original     		W981216AH W981216AH W981216 PDF

    W981216DH

    Abstract: W981216DH-75 W9812G6DH W981216DH-7
    Text: W981216DH / W9812G6DH 2M x 4 BANKS × 16 BIT SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		W981216DH W9812G6DH W981216DH-75 W981216DH-7 PDF

    COBRA5272

    Abstract: sentec tp 0401 ATMEL 0613 M95P08 ATMEL 0619 K4S641632 M95P080 TP0401 D0504
    Text: 5 4 3 2 1 COBRA5272 Module R1.0 D D CON0301B CON0301A IC 0204 Reset-LED D[31:24] BDM-Interface Reset-Key Driver /RST IC 0701 IC 0704 Reset IC 0203 optional D[23:16] EEPROM Driver Test-LED PortA (16Bit) Data[31:0] PortB (8Bit) Addr[22:0] IC 0202 D[15:8] Driver


    Original     		COBRA5272 CON0301B CON0301A 16Bit) 66MHz 100nF ICL3232CVE sentec tp 0401 ATMEL 0613 M95P08 ATMEL 0619 K4S641632 M95P080 TP0401 D0504 PDF

    W83C553F-G

    Abstract: quality and reliability report W83977TF W83C43 W9925QF CMOS SPDM Process JEDEC-STD-78 0.6 um cmos process 8 bit uC w78c32BP
    Text: Quality and Reliability Report 6. Process Related Reliability Test Data Dynamic Early Fail Study EFR 1. Test Condition Condition: Dynamic operating condition with Vcc = 4.6V for 3.3V products, T = 125°C, f = 0.8 MHz/125 KHz for synchronous DRAMs Dynamic operating condition with Vcc = 6.5V/4.3V for 5V/3.3V products, T = 125°C, f = 1 MHz/100


    Original     		Hz/125 Hz/100 W9925QF) W9920IF) W83C553FG W83977TF W83877F W91340 W9910IF) W83C553F-G quality and reliability report W83977TF W83C43 W9925QF CMOS SPDM Process JEDEC-STD-78 0.6 um cmos process 8 bit uC w78c32BP PDF

    GWIXP455BAD

    Abstract: EWIXP425ABDT PRIXP425ABD PRIXP420ABD EWIXP420ABBT GWIXP465BAE PRIXP420ABB GWIXP465BAD PRIXP425ABC ixp 460
    Text: Intel IXP4XX Product Line of Network Processors Specification Update May 2007 Order Number: 306428-007US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS


    Original     		306428-007US IXP45X/IXP46X DDRII/400 DDRI/266 IXP45X IXP46X GWIXP455BAD EWIXP425ABDT PRIXP425ABD PRIXP420ABD EWIXP420ABBT GWIXP465BAE PRIXP420ABB GWIXP465BAD PRIXP425ABC ixp 460 PDF

    IXP425

    Abstract: pin diagram of intel ixp425 processor scr 4086 IXP420 IXP422 IXP42X IXP421 FWIXP420BD IXC1100 MT48LC32M16A2
    Text: Intel IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor Specification Update October 2004 Notice: The Intel® IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor may contain design defects or errors known as errata that may cause the product to


    Original     		IXP42X IXC1100 IXC1100 IXP425 pin diagram of intel ixp425 processor scr 4086 IXP420 IXP422 IXP421 FWIXP420BD MT48LC32M16A2 PDF

    ixp425

    Abstract: No abstract text available
    Text: Intel IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor Specification Update July 2004 Notice: The Intel® IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor may contain design defects or errors known as errata that may cause the product to


    Original     		IXP42X IXC1100 IXC1100 LXT972 ixp425 PDF

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v PDF

    ixp460

    Abstract: IXP465 PRIXP425BD PRIXP422BB IXP425 ixp 460 PRIXP420BD PRIXP425BB IXP455 EWIXP425BDT
    Text: Intel IXP4XX Product Line of Network Processors Specification Update September 2005 Document Number: 306428-003 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS


    Original     		096-Mbps IXP42X IXC1100 IXP45X IXP46X ixp460 IXP465 PRIXP425BD PRIXP422BB IXP425 ixp 460 PRIXP420BD PRIXP425BB IXP455 EWIXP425BDT PDF

    W986416EH

    Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
    Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/


    Original     		W78C32C Q4/04 IS25C64A-2 IS25C64A-3 16Kx8 IS25C128-2 W986416EH W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620 PDF