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    nec VARIABLE CAPACITANCE DIODE

    Abstract: ND6361-3A ND6361-3D diode 3D
    Text: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L


    OCR Scan     		PDF L427414 ND6361-3A ND6361-3D WD6361 ND6361-3D. b4S7414 ND6361 nec VARIABLE CAPACITANCE DIODE ND6361-3D diode 3D