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    XF113 Price and Stock

    Panasonic Electronic Components ERJ-U0XF1133Y

    RES 113K OHM 1% 1/32W 01005
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    DigiKey ERJ-U0XF1133Y Reel 20,000
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    Newark ERJ-U0XF1133Y Cut Tape 20,000
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    Master Electronics ERJ-U0XF1133Y
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    Panasonic Electronic Components ERJ-U0XF1132Y

    RES 11.3K OHM 1% 1/32W 01005
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    Panasonic Electronic Components ERJ-U0XF1131Y

    RES 1.13K OHM 1% 1/32W 01005
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    DigiKey ERJ-U0XF1131Y Reel 20,000
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    Avnet Americas ERJ-U0XF1131Y Reel 18 Weeks 20,000
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    Master Electronics ERJ-U0XF1131Y
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    onsemi FSSD07UMX_F113

    IC MULTIPLEXER 24UMLP
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    DigiKey FSSD07UMX_F113 Reel 5,000
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    onsemi FSA110UMX_F113

    IC INTERFACE SPECIALIZED 10UMLP
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    XF113 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    74ls82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
    Text: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all


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    EFD1

    Abstract: No abstract text available
    Text: 2 . S ch e m atic 1. M e c h a n ic a l D i m e n s i o n s : r ~— 19.0 Max —O X ^ O S n jw ia a n n R T iR j-1 F 0.65- —I U-2.50 B 2 0 .0 1 o- -0 4 12 o- -o 9 2 O- -0 5 11 o3 O- -o 8 10 o- -o 7 Max “ 1 a a ò { n • -0 6 3. E l e c t r i c a l S p e c i f i c a t i o n s :


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    37-EFD1 MIL-STD-202G, UL94V-0 E151556 10Zmm) 10KHz 100KHz 500Vac, Jun-18â EFD1 PDF

    74LS82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
    Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­


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    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


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    XF113

    Abstract: No abstract text available
    Text: 1. M e c h a n ic a l D im e n s io n s : 2. S c h e m a t ic : o- o- 0 .5 D 0 ± 0 .0 1 5 d h 3. Electrical Specifications: @25nC 0 .0 0 5 /0 .1 3 1 2 .7 0 ± 0 .3 B OCL: 1 1 3 4 u H ± 1 5% 0CL: 6 4 5 u H DC ±15% R e s is ta n c e : @ 1 0 K H z, 0 .1 V


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    1134uHÂ 10KHz, 645uH MIL-STD-202. E15155G -t-125 102mrrO XF113 PDF