Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    YG801C09 Search Results

    YG801C09 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    YG801C09 Fuji Electric SCHOTTKY BARRIER DIODE Scan PDF
    YG801C09 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    YG801C09R Fuji Electric Schottky Barrier Diode Original PDF
    YG801C09R Fuji Electric SCHOTTKY BARRIER DIODE Original PDF

    YG801C09 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		YG801C09R O-22OF15) 13Min SC-67 500ns, PDF

    YG801C09R

    Abstract: No abstract text available
    Text: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		YG801C09R O-22OF15) 13Min SC-67 500ns, YG801C09R PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    TL130

    Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
    Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009


    Original     		ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 CB803-03 TL130 tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004 PDF

    yg802c10

    Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
    Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度


    Original     		O220AB O220F TS805C04 TS805C06 TP805C04 ESAC83-004 ESAC83M-004R ESAC83M-006R YG805C04R YG805C06R yg802c10 LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04 PDF

    YG811S06

    Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
    Text: Schottky-barrier diode Quick Selection Guide Nov-01 SBD Single Package VRRM Volts 20 30 40 Io 45 60 O O O Lead O O O O O O O O O O O O O O SC(SMD) O O SD(SMD) O O O K-pack(SMD) K-pack TO-220AB O O O O O O TO-220F O O O O TO-3P M5R POWER M6R M8R M6R O O O


    Original     		Nov-01 O-220AB O-220F ERA82-004 ERA83-004 ERA81-004 O-220 ERA83-006 ERA84-009 ERA85-009 YG811S06 SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04 PDF

    LT GBL406

    Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
    Text: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA


    Original     		5CE10 5CE100 5CE100A 5CE100C 5CE100CA 5CE10A 5CE10C 5CE10CA 5CE11 5CE110 LT GBL406 SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100 PDF

    YG801C09

    Abstract: No abstract text available
    Text: YG801C09I5A '> 3 - yh+— t - v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f ■ WKSIffi Low Vf C onnection Diagram Super high speed sw itchin g. • T V - * - 8 t t High reliability by planer design. r-W-iH«-n


    OCR Scan     		YG801C09I5A) 500ns, YG801C09 PDF

    YG801C09

    Abstract: TIL 413 yg801c
    Text: YG801C09I5A '> 3 - yh+— t-v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f Low Vf ■ WKSIffi C onnection Diagram Super high speed sw itchin g. •T V - * - 8 t t r-W-iH«-n > ©<3 High reliability by planer design.


    OCR Scan     		YG801C09I5A) 500ns, YG801C09 TIL 413 yg801c PDF

    Fuji Electric SM

    Abstract: No abstract text available
    Text: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


    OCR Scan     		YG801C09R Fuji Electric SM PDF

    YG801C09

    Abstract: S4b0
    Text: Y G 8 0 1 C O S IL A — k '> 3 y h + - / < i ; r y - f 5 r - K SCHOTTKY BARRIER DIODE • ¡H fJ l: Features Insulated package by fully m olding. Low V f C onnection D iagram S uper'high speed sw itchin g. • a * C = « # fl S tt High reliability by planer design.


    OCR Scan     		I95t/R89) Shl50 YG801C09 S4b0 PDF

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 PDF

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan     		2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082 PDF

    ERG81-004

    Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
    Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *


    OCR Scan     		ERA82-004 ERA83-004 ERA81-004 ERA83-006 ERA84-009 ERA85-009 ERB83-004 ERB81-004 ERB83-006 ERB84-009 ERG81-004 ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 era-84 YG811S0 YG802C06 PDF

    YG801C

    Abstract: YG801C09R
    Text: H04-004-07 This material and the Information herein is the property q Fuji Elacinc CoXid.They shell be neither reproduced, copied, lent, or disclosed in any way whatsoever lor the use ot any third party.nor used for the manufacturing purposes wtthout the express written consent of Fuji Electric Co_ Ltd.


    OCR Scan     		YG801C09R H04-004-07 YG801C YG801C09R PDF

    9arw

    Abstract: 40T125 T151 T760 T930 YG801C09 YG801
    Text: Y G 8 0 1 C 0 9 5A ’ Outline Drawings SCHOTTKY BARRIER DIODE 4 .7 m a x. I0.5max. 2.7 *- ,2 E 0.6 0.7 • W f t : Features 2.54 2.54 2.7 JEDEC Insulated package by fully molding. EIAJ SC-67 • teV F Low Vf Connection Diagram Super high speed switching.


    OCR Scan     		YG801C09I5A) 500ns, t-125 I95t/R89) Shl50 9arw 40T125 T151 T760 T930 YG801C09 YG801 PDF