YG808C Search Results

YG808C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
YG808C10R		Fuji Electric	SCHOTTKY BARRIER DIODE(100V / 30A TO-22OF15)		Original	PDF

YG808C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: YG808C10R 100V / 30A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0	Original	PDF	YG808C10R O-22OF15) 13Min SC-67 500ns, Termina100
Untitled Abstract: No abstract text available Text: YG808C10R 100V / 30A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0	Original	PDF	YG808C10R O-22OF15) 13Min SC-67 500ns,
YG808C10R Abstract: YG808C Text: YG808C10R 100V / 30A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0	Original	PDF	YG808C10R O-22OF15) 13Min SC-67 500ns, Termina100 YG808C10R YG808C
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	PDF	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
TL130 Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004 Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD）シングル 1 in one-package 形式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009	Original	PDF	ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 CB803-03 TL130 tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
yg802c10 Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04 Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD）シングル 1 in one-package 形式 Device type SMD 絶対最大定格対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度	Original	PDF	O220AB O220F TS805C04 TS805C06 TP805C04 ESAC83-004 ESAC83M-004R ESAC83M-006R YG805C04R YG805C06R yg802c10 LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
YG811S06 Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04 Text: Schottky-barrier diode Quick Selection Guide Nov-01 SBD Single Package VRRM Volts 20 30 40 Io 45 60 O O O Lead O O O O O O O O O O O O O O SC(SMD) O O SD(SMD) O O O K-pack(SMD) K-pack TO-220AB O O O O O O TO-220F O O O O TO-3P M5R POWER M6R M8R M6R O O O	Original	PDF	Nov-01 O-220AB O-220F ERA82-004 ERA83-004 ERA81-004 O-220 ERA83-006 ERA84-009 ERA85-009 YG811S06 SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
STPS30S45CT Abstract: CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S Text: Rectifiers Selection guide February 2005 STMicroelectronics - February 2005 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.	Original	PDF	SGRECT/1104 STPS30S45CT CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S