ZVP2110L Search Results

ZVP2110L Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZVP2110L		Ferranti Semiconductors	Quick Reference Guide 1985		Scan	PDF
ZVP2110L		Unknown	FET Data Book		Scan	PDF
ZVP2110L		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
ZVP2110L		Zetex Semiconductors	P-Channel Enhancement Mode Vertical DMOS FET		Scan	PDF

ZVP2110L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ZVP2110L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)	Original	ZVP2110L	PDF
mosfet cross reference Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is	Original	T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode	PDF
L50Q Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M Text: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50	OCR Scan	OT-23, ZVP3210M" ZVP2210M zvn3210m zvn3210l L50Q ZVN1320B ZVN2210L zvn311 ZVP3210M	PDF
ZVP2110L Abstract: ZVP2110 g291 Text: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive	OCR Scan	ZVP2110 G-290 722DS33 G-291 G-292 G-293 ZVP2110L ZVP2110 g291	PDF
IRF 544 N MOSFET Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511 Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no	OCR Scan		PDF
Ferranti Semiconductors Abstract: R5D SOT-23 ZVP2110 ZVP2110L FERRANTI ZVP2110A ZVP2110B G-293 P-Channel FET 100v to92 Text: ZETEX S E M I C O N D U C T O R S *=17□S 7 Û 0 0 0 5 7 0 3 S • ZETB 95D 0 57 8 5 P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance	OCR Scan	30S7flS ZVP2110 ZVP2110A* -100V ZVP2110B* O-220 Ferranti Semiconductors R5D SOT-23 ZVP2110 ZVP2110L FERRANTI ZVP2110A ZVP2110B G-293 P-Channel FET 100v to92	PDF