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    SPD07N60 Search Results

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    SPD07N60 Price and Stock

    Infineon Technologies AG SPD07N60C3ATMA1

    LOW POWER_LEGACY
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    DigiKey SPD07N60C3ATMA1 Reel 2,500 2,500
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    Avnet Americas SPD07N60C3ATMA1 Reel 22,500 15 Weeks 2,500
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    Mouser Electronics SPD07N60C3ATMA1 91
    • 1 $2.46
    • 10 $1.74
    • 100 $1.3
    • 1000 $1.06
    • 10000 $1
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    Verical SPD07N60C3ATMA1 2,500 2,500
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    SPD07N60C3ATMA1 119 10
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    • 10 $1.0257
    • 100 $0.7858
    • 1000 $0.7858
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    Arrow Electronics SPD07N60C3ATMA1 2,500 15 Weeks 2,500
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    SPD07N60C3ATMA1 Cut Strips 119 15 Weeks 1
    • 1 $1.1666
    • 10 $1.0257
    • 100 $0.7858
    • 1000 $0.7858
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    Newark SPD07N60C3ATMA1 Cut Tape 862 1
    • 1 $2.56
    • 10 $1.93
    • 100 $1.51
    • 1000 $1.13
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    EBV Elektronik SPD07N60C3ATMA1 16 Weeks 2,500
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    Infineon Technologies AG SPD07N60S5

    MOSFET N-CH 600V 7.3A TO252-3
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    DigiKey SPD07N60S5 Reel 2,500
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    Quest Components SPD07N60S5 1,181
    • 1 $1.89
    • 10 $1.89
    • 100 $0.567
    • 1000 $0.4914
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    ComSIT USA SPD07N60S5 37
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    Infineon Technologies AG SPD07N60C3

    MOSFET N-CH 600V 7.3A TO252-3
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    ComSIT USA SPD07N60C3 3,896
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    Infineon Technologies AG SPD07N60C3T

    MOSFET N-CH 650V 7.3A TO252-3
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    DigiKey SPD07N60C3T Reel 2,500
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    SPD07N60C3T Cut Tape 1
    • 1 $2.48
    • 10 $2.48
    • 100 $2.48
    • 1000 $2.48
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    SPD07N60C3T Digi-Reel 1
    • 1 $2.48
    • 10 $2.48
    • 100 $2.48
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    Infineon Technologies AG SPD07N60S5T

    MOSFET N-CH 600V 7.3A TO252-3
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    DigiKey SPD07N60S5T Cut Tape 1
    • 1 $2.6
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    SPD07N60S5T Reel 2,500
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    SPD07N60 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD07N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD07N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF
    SPD07N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF
    SPD07N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD07N60C3ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPD07N60C3BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A DPAK Original PDF
    SPD07N60C3T Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 7.3A DPAK Original PDF
    SPD07N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD07N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 14.6 A; Original PDF
    SPD07N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF
    SPD07N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD07N60S5T Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7.3A DPAK Original PDF

    SPD07N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Text: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original
    PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5

    07N60S5

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5

    07n60s5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 Q67040-S4196 07N60S5 07n60s5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5

    Q67040-S4423

    Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original
    PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 Q67040-S4423 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3

    07N60C3

    Abstract: Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original
    PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 07N60C3 Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3

    Q67040-S4186

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 P-TO251-3-1 P-TO252 07N60S5 Q67040-S4186

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252. • Ultra low gate charge • Periodic avalanche rated P-TO251.


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252. P-TO251. SPD07N60S5

    AR4100

    Abstract: Q67040-S4423
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 AR4100 Q67040-S4423

    Untitled

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1

    07n60c3

    Abstract: 07n60c AR4100
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07n60c AR4100

    infineon 07n60s5

    Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 SPUx3N60S5/SPDx3N60S5 Q67040-S4196 infineon 07n60s5 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5

    07N60S5

    Abstract: transistor smd code marking nc
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5 07N60S5 transistor smd code marking nc

    07n60s5

    Abstract: SPD07N60S5 SPU07N60S5 Q67040-S4186
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 SPD07N60S5 SPU07N60S5 Q67040-S4186

    07n60s5

    Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5

    SPU07N60S5

    Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6


    Original
    PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4186 07n60s5 infineon 07n60s5

    07N60C2

    Abstract: Q67040-S4311 A2206
    Text: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated


    Original
    PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 P-TO252 07N60C2 Q67040-S4311 A2206

    07N60

    Abstract: 07N60S5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 P-TO251-3-1 • Periodic avalanche rated


    Original
    PDF SPU07N60S5 SPD07N60S5 P-TO252 O-251 O-252 P-TO251-3-1 P-TO251-3-1 07N60 07N60S5

    07N60C3

    Abstract: Q67040-S4423
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original
    PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 O-251 O-252 P-TO252-3-1 P-TO252-3-1 07N60C3 Q67040-S4423

    Untitled

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge P-TO251-3-1 P-TO252-3-1


    Original
    PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 O-251 O-252 P-TO252-3-1 P-TO252-3-1

    07N60C3

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original
    PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 O-251 O-252 P-TO252-3-1 P-TO252-3-1 07N60C3

    07n60c3

    Abstract: 07N60
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge


    Original
    PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07N60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances


    OCR Scan
    PDF SPU07N60S5 SPD07N60S5 O-251 SPU07N60S5 P-T0251 07N60S5 Q67040-S4196 P-T0252