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    KA DIODE

    Abstract: 5SPR 08F4500 08F45
    Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 Doc. No. 5SYA 14PP-01 Oct. 01 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications


    Original     		PDF 08F4500 14PP-01 CH-5600 KA DIODE 5SPR 08F4500 08F45

    5SPR 08F4500

    Abstract: 08F4500 08F45
    Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0 V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications Very high di/dt capability


    Original     		PDF 08F4500 CH-5600 5SPR 08F4500 08F4500 08F45

    08F45

    Abstract: 5SPY 08F4500 GATE DRIVER ABB
    Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 18 V = 30 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPY 08F4500 • • • • • • • • • Features Asymmetric Design For single or repetitive pulse applications Very high di/dt capability


    Original     		PDF 08F4500 CH-5600 08F45 5SPY 08F4500 GATE DRIVER ABB

    ABB GTO

    Abstract: stud type diodes fjs 500
    Text: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.


    OCR Scan     		PDF 05D2501 11F2S01 45x100 ABB GTO stud type diodes fjs 500

    R2501

    Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
    Text: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches


    OCR Scan     		PDF VRRM/100V 01R2501 5SDF01R2502 14urer 3x100 45x100 R2501 01R25 71B0200 ABB GTO ci d 4800 r2503 08F4500 b0200 5SDF

    05D2500

    Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.


    OCR Scan     		PDF 15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV

    5SDD71B0200

    Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
    Text: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.


    OCR Scan     		PDF VRRM/100V 01R2501 01R2502 001bfi3fl Fig-10 3x100 45x100 5SDD71B0200 stud type diodes ABB GTO R2501 08F4500 71B0200