Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    08N80C3 Search Results

    SF Impression Pixel

    08N80C3 Price and Stock

    Infineon Technologies AG SPP08N80C3XKSA1

    MOSFET N-CH 800V 8A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP08N80C3XKSA1 Tube 1,915 1
    • 1 $3.19
    • 10 $3.19
    • 100 $3.19
    • 1000 $1.08461
    • 10000 $1.03775
    		Buy Now
    Avnet Americas SPP08N80C3XKSA1 Tube 15 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.98451
    • 10000 $0.96001
    		Buy Now
    Newark SPP08N80C3XKSA1 Bulk 943 1
    • 1 $3.67
    • 10 $3.05
    • 100 $2.44
    • 1000 $1.75
    • 10000 $1.59
    		Buy Now
    Mouser Electronics SPP08N80C3XKSA1 955
    • 1 $2.68
    • 10 $1.95
    • 100 $1.48
    • 1000 $1.11
    • 10000 $1.06
    		Buy Now
    Bristol Electronics SPP08N80C3XKSA1 48
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Chip One Stop SPP08N80C3XKSA1 Tube 1,169
    • 1 $1.96
    • 10 $1.59
    • 100 $1.15
    • 1000 $1.04
    • 10000 $1.04
    		Buy Now
    EBV Elektronik SPP08N80C3XKSA1 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG SPI08N80C3

    MOSFET N-CH 800V 8A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPI08N80C3 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG SPP08N80C3XK

    MOSFET N-CH 800V 8A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP08N80C3XK Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG SPI08N80C3XKSA1

    MOSFET N-CH 800V 8A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPI08N80C3XKSA1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark SPI08N80C3XKSA1 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Bristol Electronics SPI08N80C3XKSA1 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Infineon Technologies AG SPA08N80C3XKSA1

    MOSFET N-CH 800V 8A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA08N80C3XKSA1 Tube 1
    • 1 $3.46
    • 10 $3.46
    • 100 $3.46
    • 1000 $1.19248
    • 10000 $1.15888
    		Buy Now
    Avnet Americas SPA08N80C3XKSA1 Tube 15 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.053
    • 10000 $1.01723
    		Buy Now
    Newark SPA08N80C3XKSA1 Bulk 463 1
    • 1 $4.17
    • 10 $1.85
    • 100 $1.76
    • 1000 $1.67
    • 10000 $1.67
    		Buy Now
    Mouser Electronics SPA08N80C3XKSA1 8
    • 1 $3.11
    • 10 $1.55
    • 100 $1.42
    • 1000 $1.15
    • 10000 $1.14
    		Buy Now
    EBV Elektronik SPA08N80C3XKSA1 13,500 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    New Advantage Corporation SPA08N80C3XKSA1 11,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.9
    • 10000 $1.9
    		Buy Now
    Find more 08N80C3 price and stock on Findchips.com

    08N80C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    08N80C3

    Abstract: equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 08N80C3 equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W PDF

    08N80C3

    Abstract: equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80
    Text: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040 S4436 08N80C3 equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80 PDF

    08N80C3

    Abstract: equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3
    Text: 08N80C3, 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 VDS 800 V RDS on 0.65 Ω ID 8 A P-TO262 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP08N80C3, SPI08N80C3 SPA08N80C3 P-TO220-3-31 P-TO262 P-TO220-3-1 P-TO-220-3-31: SPP08N80C3 08N80C3 equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPI08N80C3 PG-TO262-3 08N80C3 PDF

    SPA08N80C3

    Abstract: spa08n80
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 SPA08N80C3 spa08n80 PDF

    08N80C3

    Abstract: 08n80
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP08N80C3 PG-TO220-3 08N80C3 08N80C3 08n80 PDF

    08N80C3

    Abstract: equivalent 08N80C3 PG-TO220-3 JESD22 SPP08N80C3 D51A
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP08N80C3 PG-TO220-3 08N80C3 08N80C3 equivalent 08N80C3 PG-TO220-3 JESD22 SPP08N80C3 D51A PDF

    Untitled

    Abstract: No abstract text available
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 PDF

    SPP08N80C3

    Abstract: 08n80c3
    Text: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 SPP08N80C3 08n80c3 PDF

    d51a

    Abstract: PG-TO262-3
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPI08N80C3 PG-TO262-3 08N80C3 d51a PG-TO262-3 PDF

    08N80C3

    Abstract: 08N80 08n80c SPI08N80C3 JESD22 diode d51
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPI08N80C3 PG-TO262-3 08N80C3 08N80C3 08N80 08n80c SPI08N80C3 JESD22 diode d51 PDF

    08n80c3

    Abstract: d51a SPP08N80C3
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP08N80C3 PG-TO220-3 08N80C3 08n80c3 d51a SPP08N80C3 PDF

    transistor SPP08N80C3

    Abstract: 08N80C3 SPP08N80C3 08N80
    Text: 08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated


    Original     		SPP08N80C3 P-TO220-3-1 Q67040 S4436 08N80C3 transistor SPP08N80C3 08N80C3 SPP08N80C3 08N80 PDF

    08N80C3

    Abstract: SPA08N80C3
    Text: 08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated


    Original     		SPA08N80C3 P-TO220-3-31 08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 SPA08N80C3 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    08N80C3

    Abstract: spa08n
    Text: 08N80C3 08N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 spa08n PDF

    08N80C3

    Abstract: Q67040-S4437 SPP08N80C3 08n80
    Text: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040 08N80C3 Q67040-S4437 08n80 PDF

    08N80C3

    Abstract: 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 08N80C3 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W PDF