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    SPA08N Search Results

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    SPA08N Price and Stock

    Infineon Technologies AG SPA08N50C3XKSA1

    MOSFET N-CH 560V 7.6A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA08N50C3XKSA1 Tube
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    Rochester Electronics SPA08N50C3XKSA1 930 1
    • 1 $0.7778
    • 10 $0.7778
    • 100 $0.7311
    • 1000 $0.6611
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    EBV Elektronik SPA08N50C3XKSA1 21 Weeks 1
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    Infineon Technologies AG SPA08N80C3XKSA1

    MOSFET N-CH 800V 8A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA08N80C3XKSA1 Tube 1
    • 1 $3.46
    • 10 $3.46
    • 100 $3.46
    • 1000 $1.19248
    • 10000 $1.15888
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    Avnet Americas SPA08N80C3XKSA1 Tube 15 Weeks 500
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    • 1000 $1.053
    • 10000 $1.01723
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    Mouser Electronics SPA08N80C3XKSA1 8
    • 1 $3.11
    • 10 $1.55
    • 100 $1.42
    • 1000 $1.15
    • 10000 $1.14
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    Newark SPA08N80C3XKSA1 Bulk 463 1
    • 1 $3
    • 10 $1.33
    • 100 $1.26
    • 1000 $1.2
    • 10000 $1.2
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    Quest Components SPA08N80C3XKSA1 99
    • 1 $2.2475
    • 10 $2.2475
    • 100 $1.3485
    • 1000 $1.3485
    • 10000 $1.3485
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    EBV Elektronik SPA08N80C3XKSA1 13,500 16 Weeks 500
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    New Advantage Corporation SPA08N80C3XKSA1 11,000 1
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    • 1000 $1.9
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    Infineon Technologies AG SPA08N80C3

    MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPA08N80C3 199
    • 1 $2.75
    • 10 $2.29
    • 100 $1.82
    • 1000 $1.33
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    Quest Components SPA08N80C3 85
    • 1 $2.4938
    • 10 $2.4938
    • 100 $1.4963
    • 1000 $1.4963
    • 10000 $1.4963
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    TME SPA08N80C3 67 1
    • 1 $2.04
    • 10 $1.64
    • 100 $1.37
    • 1000 $1.37
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    Wuhan P&S SPA08N80C3 50 1
    • 1 $1.57
    • 10 $1.57
    • 100 $1.31
    • 1000 $1.12
    • 10000 $1.12
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    Infineon Technologies AG SPA08N50C3

    MOSFET N-CH 560V 7.6A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SPA08N50C3 637
    • 1 -
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    • 100 $1.029
    • 1000 $0.836
    • 10000 $0.836
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    SPA08N Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA08N50C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA08N50C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 500.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.6 A; IDpuls (max): 22.8 A; Original PDF
    SPA08N50C3E8152 Infineon Technologies Transistor Mosfet N-CH 600V 0.021A 3 pin SOT-23 T/R Original PDF
    SPA08N50C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 7.6A TO220FP Original PDF
    SPA08N80C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA08N80C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 800.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 650.0 mOhm; ID(max) @ TC=25°C: 8.0 A; IDpuls (max): 24.0 A; Original PDF
    SPA08N80C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 8A TO220FP Original PDF

    SPA08N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    08N80C3

    Abstract: equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W
    Text: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 08N80C3 equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W PDF

    08N80C3

    Abstract: equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80
    Text: SPP08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040 S4436 08N80C3 equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80 PDF

    08N80C3

    Abstract: equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3
    Text: SPP08N80C3, SPI08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 VDS 800 V RDS on 0.65 Ω ID 8 A P-TO262 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP08N80C3, SPI08N80C3 SPA08N80C3 P-TO220-3-31 P-TO262 P-TO220-3-1 P-TO-220-3-31: SPP08N80C3 08N80C3 equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3 PDF

    SPA08N80C3

    Abstract: spa08n80
    Text: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 SPA08N80C3 spa08n80 PDF

    08n50c3

    Abstract: sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 08n50c3 sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 PDF

    08n50c3

    Abstract: SPA08N50C3 PG-TO220-3-31 SPI08N50C3 SPP08N50C3 Q67040-S4567
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220-3-31 PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: SPP08N50C3 08n50c3 SPA08N50C3 SPI08N50C3 SPP08N50C3 Q67040-S4567 PDF

    08n50c3

    Abstract: SPI08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPP08N50C3 08n50c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 PG-TO-220-3-31: SPP08N50C3 PDF

    08N50C3

    Abstract: AN-TO220-3-31-01 SPA08N50C3 SPI08N50C3 SPP08N50C3 47 6v 08n50 application note AN-TO220-3-31-01 Q67040-S4567
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP08N50C3 08N50C3 AN-TO220-3-31-01 SPA08N50C3 SPI08N50C3 SPP08N50C3 47 6v 08n50 application note AN-TO220-3-31-01 Q67040-S4567 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 PDF

    SPP08N80C3

    Abstract: 08n80c3
    Text: SPP08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 SPP08N80C3 08n80c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 PDF

    08N80C3

    Abstract: SPA08N80C3
    Text: SPA08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated


    Original     		SPA08N80C3 P-TO220-3-31 08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 SPA08N80C3 PDF

    08n50c3

    Abstract: 08n50 SPA08N50C3 SPI08N50C3 SPP08N50C3
    Text: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		SPP08N50C3, SPI08N50C3 SPA08N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP08N50C3 08n50c3 08n50 SPA08N50C3 SPI08N50C3 SPP08N50C3 PDF

    08N80C3

    Abstract: spa08n
    Text: SPP08N80C3 SPA08N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 spa08n PDF

    08N80C3

    Abstract: Q67040-S4437 SPP08N80C3 08n80
    Text: SPP08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040 08N80C3 Q67040-S4437 08n80 PDF

    08N80C3

    Abstract: 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W
    Text: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA08N80C3 PG-TO220FP 08N80C3 08N80C3 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF