Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1328M Search Results

    SF Impression Pixel

    1328M Price and Stock

    TXC Corporation BB-161.1328MBE-T

    XTAL OSC XO 161.1328MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BB-161.1328MBE-T Cut Tape 1
    • 1 $5.45
    • 10 $5.45
    • 100 $5.45
    • 1000 $5.45
    • 10000 $5.45
    		Buy Now
    BB-161.1328MBE-T Digi-Reel 1
    • 1 $5.45
    • 10 $5.45
    • 100 $5.45
    • 1000 $5.45
    • 10000 $5.45
    		Buy Now

    FTS BB-161.1328MBE-T

    XTAL OSC XO 161.1328MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BB-161.1328MBE-T Reel 1
    • 1 $4.29
    • 10 $3.75
    • 100 $2.728
    • 1000 $2
    • 10000 $1.579
    		Buy Now

    TXC Corporation 8WL-161.1328MBD-T

    XTAL OSC XO 161.1328MHZ 3.3V CMS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 8WL-161.1328MBD-T Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.94636
    		Buy Now

    TXC Corporation 7CL-161.1328MBD-T

    XTAL OSC XO 161.1328MHZ 3.3V CMO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 7CL-161.1328MBD-T Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.08064
    • 10000 $1.08064
    		Buy Now

    FTS QTM252J-161.1328MBJ-T

    2.5X2.0 XO 3.3V 50PPM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QTM252J-161.1328MBJ-T Reel 1
    • 1 $1.43
    • 10 $1.25
    • 100 $0.91
    • 1000 $0.667
    • 10000 $0.527
    		Buy Now
    Find more 1328M price and stock on Findchips.com

    1328M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1328M Nihon Dempa Kogyo Crystal Controlled Oscillator Original PDF

    1328M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply


    Original     		W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


    Original     		WEDPN16M72V-XBX 16Mx72 128MByte 864-bit 100MHz, 125MHz 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz WEDPN8M72V-XBX 64MByte 512Mb) 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz PDF

    WEDPN4M72V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz, WEDPN4M72V-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		L9D112G80BG4 LDS-L9D112G80BG4-A PDF

    WEDPN16M72V-XBX

    Abstract: WEDPN8M72V-XBX 54TSOP WEDPN16M72-XBX
    Text: 16M x 72 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN16M72V-XBX* Designed to complement PowerPCTM 750/755 and high performance memory controllers see other side for typical application block diagram Performance Features • SDRAM CAS Latency = 3 (125MHz), 2 (100MHz) or 3 (100MHz), 2 (75MHz)


    Original     		WEDPN16M72V-XBX* 125MHz) 100MHz) 75MHz) WEDPN8M72V-XBX* 755sbd WEDPN16M72-XBX MIF2004 WEDPN16M72V-XBX WEDPN8M72V-XBX 54TSOP PDF

    WEDPN

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz* 32MByte 256Mb) 216-bit 100MHz 125MHz WEDPN PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz PDF

    DQ75

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz DQ75 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive


    Original     		8Mx72 125MHz WEDPN8M72V-XBX WEDPN8M72V-XBX 64MByte 512Mb) 100MHz 100MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPND16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM Preliminary* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 40% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n 2.5V ±0.2V core power supply


    Original     		16Mx72 266MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		4Mx72 125MHz WEDPN4M72V-XBX WEDPN4M72V-XBX 32MByte 256Mb) 100MHz 100MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-133BC 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION „ „ High Frequency = 133MHz „ „ Single 3.3V ±0.3V power supply The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM


    Original     		WEDPN8M72V-133BC 8Mx72 133MHz WEDPN8M72V-133BC 64MByte 512Mb) PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES  High Frequency = 100, 125MHz  Package:  The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing


    Original     		4Mx72 125MHz WEDPN16M64V-XB2X WEDPN4M72V-XB2X 32MByte 256Mb) 100MHz WEDPN4M72V PDF

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: W3E16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM FEATURES „ DDR SDRAM Rate = 200, 250, 266 „ Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ BENEFITS 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX PDF

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		AS4DDR16M72PBG 16Mx72 333Mbps M72-8/XT AS4DDR16M72-10/XT 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX E1-E16 PDF

    Diodes Incorporated 17-33

    Abstract: CKE 2009 cke02 RING TERM M6 2,5mm2
    Text: PreLIMINARY Information L9D125G80BG4 2.5 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		L9D125G80BG4 LDS-L9D125G80BG4-C Diodes Incorporated 17-33 CKE 2009 cke02 RING TERM M6 2,5mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz PDF

    WEDPN16M72V-XB2X

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


    Original     		WEDPN16M72V-XB2X 16Mx72 133MHz WEDPN16M72V-XB2X 128MByte 268anges 525mm2 133MHz PDF

    WEDPN4M72V-XB2X

    Abstract: WEDPN8M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES „ „ GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz WEDPN4M72V-XB2X WEDPN8M72V-XB2X PDF

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		AS4DDR16M72PBG 16Mx72 333Mbps 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX PDF