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    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm


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    NE25118 NE25118 OT-343 IS11I2 IS12I 1S12S21I OT-343) NE25118-T1 PDF

    0544S

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 24 HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz 21 CO L g = 0.3 ^m , W g = 280 jam


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    NE76084S NE76084S IS12I IS12I IS22I NE76084-T1 0544S PDF

    NE67483

    Abstract: 1595S
    Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B NOISE FIGURE, ASSO CIATED GAIN • LOW NO ISE FIGURE: N F = 1.4 dB TYP a t f = at 1 2 G H z • HIG H A S S O C IA T E D GAIN: G a = 10 dB TYP at f = 12 GHz CQ •a u. • G ATE W ID TH : WG = 280 nm


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    NE67400 NE67483B IS12I IS12I NE67400, NE67483B NE67400 NE67483 1595S PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN Ga = 9.5 dB TYP at f = 12 GHz ffl 2. L g = 0.3 urn, W g = 280 nm <


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    NE71300 TheNE71300 NE71300 3e-12 6e-12 15e-12 5e-12 04e-12 PDF