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    2sa1424

    Abstract: NE88900 NE889
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in


    OCR Scan     		NE88900 NE88912 NE88933 NE88935 NE88900, NE88912, NE88933, NE88935 OT-23) 2sa1424 NE889 PDF

    ne800299

    Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY


    OCR Scan     		NE800196 NE800296 NE8001 NE8002 lS21l lS22l IS12I L42752S ne800299 NE800199 NE800200 40MAG NE800 PDF

    2SC2338

    Abstract: NE567 NE56787 NE56708 NE56700 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567
    Text: NEC/ CALIFORNIA 15E D bM27M14 0 0 0 14 05 b NE56700 NE56708 NE56787 NPN SILICON HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES • HIGH GAIN BANDWIDTH PRODUCT PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage


    OCR Scan     		b427414 T-31-21 NE56700 NE56708 NE56787 NE567 2SC2338 NE56787 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:


    OCR Scan     		NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I ds = 10 mA • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz 00 •a • Lg < 0.20 urn, W g = 200 im


    OCR Scan     		NE32984D NE32984D figu167 IS12I IS11I2 NE32984D-S NE32984D-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY V « . INPUT POWER FEATURES HIGH NEZ7177-8D NEZ7177-8DD NEZ7177-4D NEZ7177-4DD P out 9W 39.5 dBm Typ PidB for NEZ7177-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ7177-4D/4DD HIGH EFFICIENCY 2 er E m 33% TJADD for 4.5W Device


    OCR Scan     		NEZ7177-8D NEZ7177-8DD NEZ7177-4D NEZ7177-4DD NEZ7177-8D/8DD NEZ7177-4D/4DD PDF

    transistor NEC D 586

    Abstract: NEC D 586
    Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility


    OCR Scan     		NE321000, NE29200 NE321000 NE29200 NE321000 P14270E transistor NEC D 586 NEC D 586 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm


    OCR Scan     		NE25118 NE25118 OT-343 IS11I2 IS12I 1S12S21I OT-343) NE25118-T1 PDF

    OCI 531

    Abstract: No abstract text available
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION


    OCR Scan     		NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE LTO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE NF - 1.6 dB TYP at f - 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz m 33 , L g = 0.3 jim, Wg = 280 jim <


    OCR Scan     		NE76084 E76084 IS12S21I NE76084S NE76084-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz


    OCR Scan     		NE24200 NE24200 24-Hour PDF

    k 1117 3k

    Abstract: 317MAG
    Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: PACKAGE OUTLINE 18 Gs = 5.5 dB T Y P a t f = 12 GHz LOW PHASE NOISE: 2.1 ± 0.2 -110 dBc/Hz TYP at 100 KHz off set at f = 11 GHz


    OCR Scan     		NE72118 OT-343) E72118 1e-14 4e-12 1e-10 65e-12 046e-12 36e-10 k 1117 3k 317MAG PDF

    str 0765

    Abstract: gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750
    Text: 4 W 14 GHz INTERNALLY NEZ1414 4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIG H O U TPU T PO W ER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENC Y: 30% TYP • IN D U STR Y STA N D A R D PACKAG ING


    OCR Scan     		NEZ1414 NEZ1414-4E redu50 str 0765 gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750 PDF

    ne46134

    Abstract: NE46134 equivalent ne461
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent PDF

    m28 transistor

    Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
    Text: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z


    OCR Scan     		b427414 NE56900 NE56953E NE56954 NE56987 NE569 NE56987 m28 transistor 2SC2340 S21E PDF

    TA4001F

    Abstract: No abstract text available
    Text: TO SHIBA TA4001F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4001F VHF UHF WIDE BAND AMPLIFIER FEATURES • Band Width 2.4GHz Typ. (3dB down) • High Gain : |S2 1 |2= 12.5dB (Typ.) (f = 500MHz) • 500 Input and Output Impedance • Small Package


    OCR Scan     		TA4001F 500MHz) TA4001F PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES_ MAXIMUM AV A ILA B LE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz m td


    OCR Scan     		NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B PDF

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan     		NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS


    OCR Scan     		NE8500100 NE8500199 NE8500100 NE8500199 IS12I JIS12I IS2212 IS12S21I PDF

    opto 22 cjc

    Abstract: E6881 L 26400 IC
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE


    OCR Scan     		NE688 uE68839-T1 NE68839R-T1 24-Hour opto 22 cjc E6881 L 26400 IC PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN Ga = 9.5 dB TYP at f = 12 GHz ffl 2. L g = 0.3 urn, W g = 280 nm <


    OCR Scan     		NE71300 TheNE71300 NE71300 3e-12 6e-12 15e-12 5e-12 04e-12 PDF