ixys dsi
Abstract: 30-08AC 30-12AC ir 2411
Text: DSI 30 Rectifier Diode 220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings
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ISOPLUS220TM
220TM
30-08AC
30-12AC
ISOPLUS220
DS98791A
ixys dsi
30-08AC
30-12AC
ir 2411
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IXUC160N075
Abstract: No abstract text available
Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous
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IXUC160N075
ISOPLUS220TM
220TM
728B1
065B1
123B1
IXUC160N075
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52N30
Abstract: 52N30P IXFC52N30P 1M300 52APF
Text: IXFC52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFC52N30P
200ns
220TM
E153432
52N30P
6-13-06-C
52N30
52N30P
IXFC52N30P
1M300
52APF
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Untitled
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G C A G Isolated back surface*
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
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STE30NA50-DK
Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000
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OT-82
OT-223
O-220
220TM
MAX220TM
218TM
O-247
MAX247TM
Max247
Max220
STE30NA50-DK
ISOWATT-220
to220
ste38na50
transistors irf640
STE30NA50
STP5NA90FI
STB30N10
STE30NA50-da
ISOWATT220
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IXFC24N50
Abstract: IXFH24N50
Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC24N50 VDSS ID25 RDS on trr 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V Maximum Ratings
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IXFC24N50
ISOPLUS220TM
220TM
IXFH24N50
IXFC24N50
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC16N50P
200ns
220TM
E153432
16N50P
5J-745
5-1-09-C
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Untitled
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS 220TM Type A 800 1200 C CS 29-08io1C CS 29-12io1C G TVJ = TVJM TC = 95°C; 180° sine (IT(RMS) current limit)
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
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13N50
Abstract: IXTH12N50A
Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω 220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS
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13N50
ISOPLUS220TM
220TM
IXTH12N50A
728B1
13N50
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IXUC200N055
Abstract: 123B16
Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS on = 5.1 mΩ 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous
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IXUC200N055
ISOPLUS220TM
220TM
728B1
065B1
123B1
IXUC200N055
123B16
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Z 728
Abstract: 15N80Q IXFH15N80Q 15N80
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg 220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
728B1
123B1
728B1
065B1
Z 728
15N80Q
IXFH15N80Q
15N80
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Phase-leg Rectifier Diode
Abstract: No abstract text available
Text: DSP 8 Phase-leg Rectifier Diode VRRM = 800/1200 V IF AV M = 2 x 11 A 220TM Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM E153432 DSP 8-08AC DSP 8-12AC Preliminary Data Sheet 1 2 3 Isolated back surface* Symbol
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ISOPLUS220TM
220TM
E153432
8-08AC
8-12AC
ISOPLUS220
DS98820
Phase-leg Rectifier Diode
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IGD 001
Abstract: No abstract text available
Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G Isolated back surface*
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ISOPLUS220TM
220TM
29-08io1C
29-12io1C
IGD 001
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60n10
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous
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60N10
ISOPLUS220TM
220TM
728B1
065B1
123B1
60n10
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC14N60P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC14N60P
200ns
220TM
E153432
14N60P
12-22-08-G
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Untitled
Abstract: No abstract text available
Text: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Test Conditions
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ISOPLUS220TM
220TM
19-08ho1C
19-12ho1C
ISOPLUS220
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IXFC14N60P
Abstract: 14n60 T14n
Text: IXFC14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC14N60P
200ns
220TM
E153432
14N60P
12-22-08-G
IXFC14N60P
14n60
T14n
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CS19
Abstract: No abstract text available
Text: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G C Symbol
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ISOPLUS220TM
220TM
19-08ho1C
19-12ho1C
ISOPLUS220
CS19
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Untitled
Abstract: No abstract text available
Text: HiPerDynFREDTM Epitaxial Diode IFAV VRRM trr 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 600 600 DSEA ISOPLUS 220TM Type 1 DSEC 2 3 DSEA 16-06AC DSEC 16-06AC G 1 Symbol 2 Conditions 3 TC = 120°C; rectangular, d = 0.5
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ISOPLUS220TM
220TM
16-06AC
6-06A
DS98831
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IXUC100N055
Abstract: No abstract text available
Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC100N055 VDSS = 55 V ID25 = 100 A RDS on = 7.7 mW 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20
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IXUC100N055
ISOPLUS220TM
220TM
-100A/ms,
IXUC100N055
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS
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220TM
26N50P
02-09-06-B
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS on ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS
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220TM
14N80P
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96N15P
Abstract: TEm 2411
Text: PolarHTTM HiPerFET Power MOSFET 220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions
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ISOPLUS220TM
96N15P
220TM
E153432
96N15P
TEm 2411
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CS19
Abstract: No abstract text available
Text: CS 19 ADVANCE TECHNICAL INFORMATION = 800 - 1200 V = 35 A = 13 A VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Symbol
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ISOPLUS220TM
220TM
19-08ho1C
19-12ho1C
ISOPLUS220
CS19
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