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    Untitled

    Abstract: No abstract text available
    Text: 3Q E D WM 7 ci 5 c1 2 3 7 Q 030m E SGS-THOMSON 1 • " P 3 c M s û S"TH0MS0N =[L[i(gTO10(g i M T H 4 0 N 0 6 C H IP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM ' DIE SIZE: 221x221 mils ' METALLIZATION: Top Al Back A u /C r/N i/A u ’ BACKSIDE THICKNESS:


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    sgsp311

    Abstract: substitu bipolar transistors sgsp331 sgsp531 10a 400v bipolar transistor
    Text: r z 7 ^ 7 § S G S - m o M S O N M g [M & (I(g T[M iiO (gS TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup­ plies. H.F. welding systems, industrial ovens, re­ lay drivers and other similar applications. These


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