10ETS
Abstract: 10ETS08 10ETS12 AN-994
Text: 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS TO-220AC • Input rectification • Vishay Semiconductors switches and output rectifiers
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Original
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10ETS08PbF,
10ETS12PbF
2002/95/EC
O-220AC
10ETS.
11-Mar-11
10ETS
10ETS08
10ETS12
AN-994
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PDF
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB130FA60 UFB120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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Original
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VS-UFB130FA60
UFB120FA60P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-HFA90FA120 HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal
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Original
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VS-HFA90FA120
HFA80FA120P
E78996
2002/95/EC
OT-227
HFA80FA120P)
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB230FA60 UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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Original
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VS-UFB230FA60
UFB200FA60P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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Original
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HFA120FA120P
E78996
2002/95/EC
OT-227
HFA120FA120P)
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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Original
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UFL60FA60P
OT-227
OT-227
E78996
2002/95/EC
UFL60FA60P
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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Original
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HFA80FA120P
E78996
OT-227
2002/95/EC
HFA80FA120P)
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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VPR5Z
Abstract: No abstract text available
Text: VPR5Z, VPR7Z Vishay Foil Resistors Ultra High Precision Bulk Metal Z-Foil Technology Power Current Sensing Resistors with TCR of ± 0.05 ppm/°C and Power Rating up to 7 W FEATURES • Temperature coefficient of resistance TCR : ± 0.05 ppm/°C (0 °C to 60 °C)
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Original
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1K2345
27-Apr-2011
VPR5Z
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PDF
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GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
GA100NA60UP
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PDF
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gt100
Abstract: GT100NA120UX
Text: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227
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Original
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GT100NA120UX
OT-227
E78996
2002/95/EC
OT-227
11-Mar-11
gt100
GT100NA120UX
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PDF
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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GT100DA120U
OT-227
E78996
2002/95/EC
18-Jul-08
GT100DA120U
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA60FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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Original
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HFA60FA120P
E78996
OT-227
2002/95/EC
HFA60FA120P)
OT-227
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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Original
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22hay
11-Mar-11
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PDF
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UFB200FA
Abstract: No abstract text available
Text: UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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Original
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UFB200FA60P
OT-227
OT-227
E78996
2002/95/EC
UFB200FA60P
11-Mar-11
UFB200FA
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PDF
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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PDF
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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PDF
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Untitled
Abstract: No abstract text available
Text: 145104-01-XX.XX NOTES: REVISIONS DRAWING NO. 1. MATERIALS AND FINISHES: REV DESCRIPTION A THIRD ANGLE PROJ. B SMB RIGHT ANGLE CRIMP PLUG - P/N: 142194 CABLE RG-316 CABLE ECO 30-Sep-10 2104 RELEASE TO MFG. 22-Jul-10 SEE SHEET 1 27-Mar-14 SMB R/A CRIMP PLUG P.NO WAS 142193
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Original
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145104-01-XX
30-Sep-10
22-Jul-10
RG-316
27-Mar-14
RG-316/U
14-Mar-14
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PDF
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1114A
Abstract: GB50LA120UX
Text: GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227
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Original
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GB50LA120UX
OT-227
E78996
2002/95/EC
11-Mar-11
1114A
GB50LA120UX
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PDF
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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GT100DA120U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA120U
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PDF
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IRFP250
Abstract: UFH60GA60P E78996 rectifier module 0 227 200 001 SO 227 Package
Text: UFH60GA60P Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Hyperfast reverse recovery • Optimized for power conversion: welding and industrial
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Original
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UFH60GA60P
OT-227
OT-227
E78996
2002/95/EC
UFH60GA60P
11-Mar-11
IRFP250
E78996 rectifier module
0 227 200 001
SO 227 Package
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PDF
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GB50NA120UX
Abstract: No abstract text available
Text: GB50NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227
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Original
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GB50NA120UX
OT-227
E78996
2002/95/EC
11-Mar-11
GB50NA120UX
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PDF
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GT100NA120UX
Abstract: No abstract text available
Text: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227
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Original
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GT100NA120UX
OT-227
E78996
2002/95/EC
11-Mar-11
GT100NA120UX
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PDF
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anti-fretting lubricant
Abstract: 0 265 006 256 tyco 17105-3608
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N IN T E R N A T IO N A L R IG H T S 2 , - LOC RESERVED. C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N
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OCR Scan
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27/xm[
22JUL10
18EEB2010
22JUL2010
30SEP2009
3QSEP2009
anti-fretting lubricant
0 265 006 256
tyco 17105-3608
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PDF
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