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    KEMET Corporation C323C160F3G5TA

    CAP CER 16PF 25V C0G/NP0 RADIAL
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    Mouser Electronics C323C160F3G5TA 304
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    KEMET Corporation C323C160K3G5TA

    CAP CER RAD 16PF 25V C0G 10%
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    KEMET Corporation C323C160J3G5TA

    CAP CER 16PF 25V C0G/NP0 RADIAL
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    KEMET Corporation C323C160G3G5TA

    CAP CER 16PF 25V C0G/NP0 RADIAL
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    KEMET Corporation C323C160FAG5TA

    CAP CER 16PF 250V C0G/NP0 RADIAL
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    • 1 $1.04
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    23C160 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    48-PIN

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ23C16040BL, 23C16080BL 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C16040BL and µ23C16080BL are 16,777,216 bits mask-programmable ROM. The word organization is


    Original
    PD23C16040BL, 23C16080BL 16M-BIT 16-BIT PD23C16040BL PD23C16080BL 48-pin 44-pin PDF

    48-PIN

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C16040BL, 23C16080BL 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C16040BL and µ23C16080BL are 16,777,216 bits mask-programmable ROM. The word organization is


    Original
    PD23C16040BL, 23C16080BL 16M-BIT 16-BIT PD23C16040BL PD23C16080BL 48-pin 44-pin PDF

    48-PIN

    Abstract: 23C160
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C16040BL, 23C16080BL 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C16040BL and µ23C16080BL are 16,777,216 bits mask-programmable ROM. The word organization is


    Original
    PD23C16040BL, 23C16080BL 16M-BIT 16-BIT PD23C16040BL PD23C16080BL 48-pin PD23C16040BL) 23C160 PDF

    din 43661

    Abstract: MC2941 MS25036 amp crimping ms25036 lug lm 8712 c 5568 23C1606 wire ferrule crimp 3240 ST 9722 WECO* 1502
    Text: ND3% BASE1 XXXX5508-1101-1-P 1101 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 17:36 TS:TS date TS time CONNECTORS & ACCESSORIES Same-Day Shipping, Next-Day Delivery TERMINAL BLOCKS – PLUG & SOCKET LSF-SMT SERIES 5MM PITCH PCB PUSH-IN TERMINAL CONNECTORS CONT.


    Original
    5/90G, 21M1973 21M1975 21M0728 21M0729 21M0730 21M0732 21M0734 HBL2411, HBL2421, din 43661 MC2941 MS25036 amp crimping ms25036 lug lm 8712 c 5568 23C1606 wire ferrule crimp 3240 ST 9722 WECO* 1502 PDF

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


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    MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000 PDF

    hd12d

    Abstract: 23C1600
    Text: 23C16000A GoldStar 2M x8/lM x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 23C16000A high performance read only memory is organized either as 2 ,0 9 7 ,1 5 2 x 8 bit Byte Mode| or as 1,048,576 x 16 bit (Word Mode


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    GM23C16000A 23C16000A GM23C16000A 23C16000A 4D2fl757 hd12d 23C1600 PDF

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B PDF

    23C16005

    Abstract: No abstract text available
    Text: 23C16005A G CMOS MASK ROM 16M-Bit (2M x8/1M x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 120ns (max.) Page access: 50 ns (max.) • Supply voltage: single + 5V


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    KM23C16005A 16M-Bit 120ns 100mA 42-pin, 44-pin, KM23C16005A) KM23C16005AG) 23C16005 PDF

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 KM41C4002-10 KM41C4000A-7


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    KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15 PDF

    4170A

    Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
    Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL


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    GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL 71C41OOD/DL 71C4400B/BL 71C4400C/CL 71C4400D/DL GM71C 800A/AL 4170A mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264 PDF

    23C160

    Abstract: No abstract text available
    Text: 23C16050 2M x8/lM x 16BIT GoldStar CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description The 23C16050 high performance read only memory is organized either as 2,097,152x8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The 23C16050


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    GM23C16050 16BIT GM23C16050 152x8 GM23C A3-A19 600mil 42pin 23C160 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The ¿¡23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).


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    16M-BIT 16-BIT PD23C16000W 42-pin 44-pin 48-pin 44-pin Activ6000WGX PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The ¿¡23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).


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    16M-BIT 16-BIT PD23C16000W 42-pin 44-pin 48-pin 44-pin Act6000WGX PDF

    Untitled

    Abstract: No abstract text available
    Text: 23C16001 LG Semicon Co.,Ltd. Description 2,097,152 W ORDS x 8 BIT CMOS M ASK ROM Pin Configuration The G M 23C 16001 high performance read only memory is organized as 2,097,152 words by 8 bits and has an access time o f 120ns. It needs no external control clock to assure simple operation.


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    GM23C16001 120ns. GM23C16001 120ns A0-A20 PDF

    23C8001A

    Abstract: 23C8001 KM23C2001 2001h 23c4001
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28


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    32000G 32000FP. 23C32100G 32100FP 23C8001A 23C8001 KM23C2001 2001h 23c4001 PDF

    KM23C16005A

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E J> m GDlTD'ifl 0 2 5 CMOS MASK ROM 23C16005A G 16M-Bit (2M x 8/1 M x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 120ns (max.)


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    KM23C16005A 16M-Bit 120ns 100mA 42-pin, 44-pin, 7Tb414E GG171Q2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16{word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +SV • Current consumption


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    KM23C 16000C 16M-Bit /1Mx16) 100ns 23C16000C 44-T80P2-400 KM23C16000C( 152x8 576x16 PDF

    23C1600

    Abstract: 23C16000
    Text: 23C16000 CMOS MASK ROM 16M-Bit 2 M X 8 /1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 2 ,0 9 7 ,1 5 2 » 6 (b y te m ode) 1 ,0 4 8 ,5 7 6 x 16 (w o rd m o d e ) T h e K M 2 3 C 1 6 0 0 0 is a fu lly s ta tic m a sk p ro g ra m m a b le


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    KM23C16000 16M-Bit 23C16000) 23C16000G) 23C1600 23C16000 PDF

    tl 0741

    Abstract: ic tl 0741
    Text: 23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access tim e : 100ns(M ax.) • Supply voltage : single +5V • Current consumption


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    KM23C16000C 16M-Bit /1Mx16) 100ns 16000C 44-TSQP2-400 23C16000C 152x8 576x16 44-TS tl 0741 ic tl 0741 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7Tb414S ÜG170cia 534 »SPICK 23C16000 G CMOS MASK ROM 16M-Bit (2 M X 8/1M X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152x8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)


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    7Tb414S G170c KM23C16000 16M-Bit 152x8 150ns 42-pin, 44-pin, 23C16 KM23C PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


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    KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    23C16000

    Abstract: S47AA 23C1600 KM23C16000
    Text: PRELIMINARY 23C16000 CMOS MASK ROM 1 6 M -B it 2 M X 8 / 1M X 16 C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access tim e: 150ns (max.) • Supply voltage: single + 5V


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    KM23C16000 150ns 50fjA 42-pin, 44-pin, KM23C16000) KM23C16000G) 23C16000 S47AA 23C1600 KM23C16000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 23C16005AG ELECTRONICS CM OS Mask ROM 2M X 8/1M X 16 CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152x8(byte mode) 1,048,576x16(word mode) • Fast access time Random Access : 120ns (max.) Page Access: 50ns(max.) • Supply voltage : single +5V


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    KM23C16005AG 152x8 576x16 120ns 44-SQP-600 KM23C16005AG 152x8bit 0D3132A PDF

    KM23C1010

    Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10


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    KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 KM23C1010 KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ PDF