CTLB042234-013
Abstract: No abstract text available
Text: 501-616 Qualification Test Report 23Jan06 Rev A MICTOR SB True SMT Connector 1. INTRODUCTION 1.1. Purpose Testing was performed on Tyco Electronics MICTOR SB connectors to determine their conformance to the requirements of Product Specification 108-2139, Revision A.
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23Jan06
18Jul05
15Oct05.
CTLB042234-013.
CTLB042234-013
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EIA-638
Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 Mictor EIA-364-18
Text: 108-2139 Product Specification 23Jan06 Rev A MICTOR SB True SMT Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics True Surface Mount (SMT) Style Single Beam Matched Impedance (MICTOR SB) Connector for mezzanine
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23Jan06
prod139
EIA-638
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-28
Mictor
EIA-364-18
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Si5908DC
Abstract: No abstract text available
Text: SPICE Device Model Si5908DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5908DC
S-60073Rev.
23-Jan-06
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Si5905DC
Abstract: No abstract text available
Text: SPICE Device Model Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5905DC
18-Jul-08
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Si4822DY
Abstract: No abstract text available
Text: SPICE Device Model Si4822DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4822DY
18-Jul-08
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3771
Abstract: AN609 Si4963DY
Text: Si4963DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4963DY
AN609
23-Jan-06
3771
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Si4992EY
Abstract: No abstract text available
Text: SPICE Device Model Si4992EY Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4992EY
18-Jul-08
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Si4982DY
Abstract: No abstract text available
Text: SPICE Device Model Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4982DY
18-Jul-08
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Si4420BDY
Abstract: No abstract text available
Text: SPICE Device Model Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4420BDY
18-Jul-08
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Si5904DC
Abstract: No abstract text available
Text: SPICE Device Model Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5904DC
18-Jul-08
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Si5903DC
Abstract: No abstract text available
Text: SPICE Device Model Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5903DC
S-60072Rev.
23-Jan-06
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Si4420BDY
Abstract: V3231
Text: SPICE Device Model Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4420BDY
netw09
S-60074Rev.
23-Jan-06
V3231
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Si4484EY
Abstract: No abstract text available
Text: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4484EY
S-60074Rev.
23-Jan-06
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Si4953ADY
Abstract: Si4953ADY SPICE Device Model
Text: SPICE Device Model Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4953ADY
S-60073Rev.
23-Jan-06
Si4953ADY SPICE Device Model
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Untitled
Abstract: No abstract text available
Text: SL2150D Cable Tuner Front End LNA with AGC Data Sheet Features September 2005 • Single chip dual output LNA • Wide dynamic range on both channels • Independent AGC facility incorporated into all channel paths • Independent disable facility incorporated into all
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SL2150D
SL2150D/KG/LH1S
SL2150D/KG/LH2R
SL2150D/KG/LH2T
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BZG05C9V1
Abstract: smd zener diode code 24 zener 7.5 B 47 35-1000 39 do-214ac BZG05C3V3 BZG05C3V6 BZG05C3V9 BZG05C4V3 BZG05C4V7
Text: BZG05C-Series Vishay Semiconductors Zener Diodes Features • • • • • • • Glass passivated junction High reliability e3 Voltage range 3.3 V to 100 V Fits onto 5 mm SMD footpads Wave and reflow solderable Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BZG05C-Series
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
BZG05C9V1
smd zener diode code 24
zener 7.5 B 47
35-1000
39 do-214ac
BZG05C3V3
BZG05C3V6
BZG05C3V9
BZG05C4V3
BZG05C4V7
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VSR20003R2
Abstract: VSR2000-3R2 finisar 300-pin transponder OC-768 STM-256 300-pin BBTR4005
Text: Finisar BBTR4005 PRODUCT BRIEF 40Gb/s SHORT REACH TRANSPONDER PRODUCT DESCRIPTION FEATURES The Finisar 40Gb/s Kodiak transponder provides a complete electro-optical interface for the newest generation of high speed optical transport. Advanced mixed signal chip-sets provide
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BBTR4005
40Gb/s
300-pin
40Gb/s
SFI-5-01
SxI-5-01
23-Jan-06
VSR20003R2
VSR2000-3R2
finisar 300-pin transponder
OC-768
STM-256
300-pin
BBTR4005
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PDF
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Si5513DC
Abstract: No abstract text available
Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5513DC
S-60074Rev.
23-Jan-06
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Si6415DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6415DQ
S-60075Rev.
23-Jan-06
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Si5975DC
Abstract: No abstract text available
Text: SPICE Device Model Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5975DC
S-60073Rev.
23-Jan-06
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4026 datasheet
Abstract: A 2231 AN609 Si4946BEY 36892 1.0895 3-3-508
Text: Si4946BEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4946BEY
AN609
23-Jan-06
4026 datasheet
A 2231
36892
1.0895
3-3-508
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7106DN
S-60075Rev.
23-Jan-06
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Si7120DN
Abstract: No abstract text available
Text: SPICE Device Model Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7120DN
S-60072Rev.
23-Jan-06
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Untitled
Abstract: No abstract text available
Text: 3 6 TH IS O DRAWING COPYRIGHT IS UNP UBLISHED. 19 RELEASED FOR P U B L I C A T I O N BY AMP INCORPORATED. A L L RI G HT S LOC DIST REVISIONS RESERVED. LTR D E S C R I P T IO N FF , PLUG #1 ASSEMBLY INFINIBAND [6 40] THRU -6 DWN APVD 23JAN06 TS DL FF PLUG PIN
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OCR Scan
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23JAN06
15AUG01
00YY9
JUN97
AN-06
/home/usOI5872/edmmod
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