26n5
Abstract: No abstract text available
Text: Key Parameters VDSM = 6500 ITAVM = 2650 ITRMS = 4160 ITSM = 45000 VT0 = 1.12 rT = 0.290 V A A A V mΩ Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA 1001-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
|
Original
|
26N6500
26N6500
26N6200
26N5800
67xVDRM
CH-5600
26n5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 2810 A 4410 A 45000 A 1.12 V 0.29 mΩ Ω Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
|
Original
|
26N6500
5SYA1001-03
26N6500
26N6200
26N5800
CH-5600
|
PDF
|
26N6500
Abstract: No abstract text available
Text: VDSM = 6500 V ITAVM = 2810 A ITRMS = 4410 A ITSM = 45000 A VT0 = 1.12 V rT = 0.290 mΩ Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
|
Original
|
5SYA1001-03
26N6500
26N6500
26N6200
26N5800
67xVDRM
11ing
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 2810 A 4410 A 45000 A 1.12 V 0.290 mΩ Ω Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
|
Original
|
26N6500
5SYA1001-03
26N6500
26N6200
26N5800
CH-5600
|
PDF
|