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    Walsin Technology Corporation 0402N101G500CT

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    Walsin Technology Corporation 0402N101J250CT

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    Susumu Co Ltd RG2012N-101-W-T1

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    Susumu Co Ltd RG2012N-101-D-T5

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    2N101 Datasheets (296)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N101 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N101 Unknown Vintage Transistor Datasheets Scan PDF
    2N101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N101 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N101 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N101 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N101 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
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    2N101 Unknown GE Transistor Specifications Scan PDF
    2N1010 Motorola Motorola Semiconductor Datasheet Library Scan PDF
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    2N1010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1010 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1010 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
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    2N1010 RCA RCA Transistor and Diode Data Scan PDF
    2N1011 Germanium Power Devices Germanium Power Transistors Scan PDF
    ...

    2N101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1011

    Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
    Text: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136


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    PDF 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136 2N1159 2N1537 N1137 Germanium power

    Untitled

    Abstract: No abstract text available
    Text: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.


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    PDF 2N1016B, 2N1016C, 2N1016D MIL-PRF-19500/102 2N1016 high-reliabilit32

    2n1016

    Abstract: No abstract text available
    Text: , Line. <~>E.ml-L-ona.u.cko'i u-^i 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN POWER TRANSISTROS 2N1015/2N1016 Inches . Mm. iymbo A 08 d 0D 0D, <t>0, e e, H Min. Max. .560 .060 .170 12.70


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    PDF 2N1015/2N1016 2n1016

    nkt270

    Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
    Text: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385


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    PDF 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 nkt270 Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801

    Untitled

    Abstract: No abstract text available
    Text: 2N101 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)70’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N101

    Untitled

    Abstract: No abstract text available
    Text: 2N1012 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)22 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.40 h(FE) Max. Current gain.


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    PDF 2N1012

    2N2227

    Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
    Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32


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    PDF 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 MT-52 2N2227 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229

    delco

    Abstract: 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Delco Elecs PPC Product 2N1012 Generallnst 2N1013 2N1014 2N1015 Franel Corp PPC Product 2N1015A Franel Corp PPC Product Semitronics 2N1015B Franel Corp PPC Product 2N1015C Elec Trans Gnrl Trans


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    PDF 2N1012 2N1013 2N1014 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F delco 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077

    Untitled

    Abstract: No abstract text available
    Text: 2N1010 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)2.0m Absolute Max. Power Diss. (W)20m Maximum Operating Temp (øC)55õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N1010

    Untitled

    Abstract: No abstract text available
    Text: 2N1018 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)4.0u @V(CBO) (V) (Test Condition)1.5 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


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    PDF 2N1018 Freq20MÂ

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


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    PDF 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B

    Untitled

    Abstract: No abstract text available
    Text: $ E - tfn ? n z lì£ ]J A rm s [jg p ^ ^ ,( Q ]V rm s A C 'J L '— m D 2N101LF D 2N 101LG D 2N 201LF D 2N 201LG « (C R * * v < r t * D 2N201LF18 D 2 N 2 0 1 LG 1 8 « fè N O . (BittPJO) U L : E69031 CSA : LR48894 T'U V : R75168/R85137 I i : ( i i i )


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    PDF 2N101LF 101LG 201LF 201LG 2N201LF18 E69031 LR48894 R75168/R85137 D2N20ILFI8 D2N20ILGI8

    2N1016

    Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
    Text: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,


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    PDF DDGD43T 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 152-TO-82 2N1016 2N2772 2N2771 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430

    2n1016

    Abstract: 2n2739
    Text: POW ER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS le B V cbo B V ceo B V ebo V A V V Watts < 25°C hFE MIN MAX ì> V CE le V A Test Sat Voltages Conditions Ib le V CE V be A A V V Iebo ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


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    PDF 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2n2739

    2N2772

    Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
    Text: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT


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    PDF 2N1015, 2N1015 2N1015A 2N1016, 2N1016 2N1016A 2N3429 2N3429-32 MT-52 MT-33 2N2772 TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2N2226 2N1050C

    transistor kc 2026

    Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
    Text: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,


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    PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B -I-150 2N1016C 2N1016D MIL-S-19500/102A transistor kc 2026 2N10160 2n1019

    2N1016B

    Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
    Text: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­


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    PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B 2N1016C 2N1016D MIL-S-19500, transistor kc 2026 102A MC 3041 2N1016 kc 2026

    2N1011

    Abstract: marking 67A
    Text: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)


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    PDF MIL-S-19500/67A MIL-T-19500/67 50-WATT 2N1011 -65to 5961-AO78 2N1011 marking 67A

    TO82 TRANSISTOR

    Abstract: TO82 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C


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    PDF 25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227

    393A

    Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
    Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440


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    PDF 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS TYPE NO. TO-82 *•* _ PT MAXIMUM RATINGS m 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX * A Va V le Sat Voltages Va V« V V Test Conditions le fa I ebo A ma A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


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    PDF 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2752t 2N2753f fTO-82 60MIL

    2n1016

    Abstract: 2N2752 JAN2N1016B
    Text: POWER TRANSISTORS PT TYPE NO. SECTION 3 TO-82 M AXIM UM R A TIN CS B V c b o B V ceo BV ebo le V V V A Watts @ 25°C Sat Voltages WE MIN MAX Ic V ce V ce V be Ic Ib I ebo A V V V A A ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


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    PDF 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N2752 JAN2N1016B

    D2N201LE

    Abstract: D2N101LE D2N201LD D2N201LD18 D2N201 975mm d2n20ild
    Text: mmtèrnm. y Arms UglDjgg^JiPVrms A C J U — m % C R ^ /x 'r tJK U L : E69031 CSA : LR48894 (BÌttP.30) TUV : R75Ì68/R85137 m n & 'à : D 2N 101LD D 2N101LE D 2N201LD D 2N 201LE D 2N 2 0 1 LD 1 8 D2N201 L E I 8 S ìtè N O . lO g H UL CSA ¡3$ /È PO TUV


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    PDF D2N1011â D2N101LE D2N201LD D2N201LE D2N201LD18 D2N201 E69031 LR48894 R75168/R85137 D2N20ILD 975mm

    TO82 TRANSISTOR

    Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C


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    PDF e6DjP073L. 254D22 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1016 2N1016A TO82 TRANSISTOR npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227