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    Omega Engineering PRTXI-1-2N-1-4-6-IO

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    Omega Engineering PRTXI-1/2N-1/4-6-IO

    Rtd, Prtxi, 1/2N Npt, 1/4 Dia, 6 Inch; Length:6"; External Diameter:0.25"; Probe Body Material:316L Stainless Steel; Product Range:Prtxi Series Rohs Compliant: Yes |Omega PRTXI-1/2N-1/4-6-IO
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    Newark PRTXI-1/2N-1/4-6-IO Bulk 1 1
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    RS PRTXI-1/2N-1/4-6-IO Bulk 2 3 Weeks 1
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    TestEquity LLC PRTXI-1/2N-1/4-6-IO
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    Samsung Semiconductor 2N146

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    Quest Components 2N146 1
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    2N146 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N146 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N146 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N146 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N146 Unknown GE Transistor Specifications Scan PDF
    2N146 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N146 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N146 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N146 Unknown Vintage Transistor Datasheets Scan PDF
    2N1460 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1461 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1461 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1461 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1461 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1461 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1461 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N1462 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1462 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1462 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N1462 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1462 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N146 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N146

    Abstract: No abstract text available
    Text: 2N146 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)65m Maximum Operating Temp (øC)75 I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)9.0 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N146

    Untitled

    Abstract: No abstract text available
    Text: 2N1469 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1469

    2SA987

    Abstract: 2N1026A LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 NB321F NB321X NB321Y 2N2105 2N2105 2N2105 2N1026A 2N1469 2N940 V410A 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 NB221EH NB221FH NB221XH NB221YH NB021ET NB021FT NB023ET NB023FT 2SA987 NB021FI


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    PDF NB321F NB321X NB321Y 2N2105 2N1026A 2N1469 2N940 V410A 2SA987 LOW-POWER SILICON PNP

    Untitled

    Abstract: No abstract text available
    Text: 2N1469+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1469

    rca 101m

    Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50


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    PDF 2SC458K 2N3856A BC383L MPS3707 BC223A BC232A BC223 rca 101m Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402

    Delco

    Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
    Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -


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    2N1025

    Abstract: 2N1026 2N1469 2N327A
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N935 2N936 2N937 2N938 2N939 2N940 — GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTORS 2N327A 2N328A 2N329A


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    PDF 2N935 2N936 2N937 2N938 2N939 2N940 2N327A 2N328A 2N329A 2N1025 2N1025 2N1026 2N1469 2N327A

    MP2145

    Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
    Text: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63


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    PDF MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945

    OC139

    Abstract: Low-Power Germanium NPN 2N1694 2N557 2N558 2N147 2N212 2N576 2N634 TR07
    Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer V BR CBO Ie Max (A) hFE (V) fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CEO (V) PD Max (W) Derate at (WrC) Toper Max eC) 2.0m 100 S TO-5 2.5m 100 J 100 J 100 S 100 S 100 J 100 J TO-l TO-5 TO-22var TO-5


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    PDF 2N445 NKT773 2N292A 2N446 2N558 2N165 2N1288 2N447 2N172 2N148 OC139 Low-Power Germanium NPN 2N1694 2N557 2N147 2N212 2N576 2N634 TR07

    tn-59

    Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
    Text: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A


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    PDF 150mA i00mA 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2958 2N2959 2N3133 tn-59 2222 NPN N 2222 2N2906A 2N2907

    2N1025

    Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
    Text: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.


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    PDF MIL-5-19500/78C MIL-S-19500/78B 2N1025, 2N1026 2N1469 2N1025 2N1469 CU10A 2N1026 JAN 2N146 vqb 71

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


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    PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


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    PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    sft214

    Abstract: AT1138 SFT213 2N2709 GERMANIUM PNP LOW POWER TRANSISTORS 2sb234 2sb232 SFT240 AOY25 SFT212
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol


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    PDF B134B B10144 B10144A B10144B 300kt CTP1117 CTP1127 300ki CTP1133 sft214 AT1138 SFT213 2N2709 GERMANIUM PNP LOW POWER TRANSISTORS 2sb234 2sb232 SFT240 AOY25 SFT212

    2n2709

    Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 2n2709 C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    2N1855

    Abstract: 0E-18 2N1025 2n936
    Text: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N3298 2N330A 2N923 2N924 2N925 2N1855 0E-18 2N1025 2n936

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    O7703

    Abstract: ic sj 2036 2N1489 2N1490 oc142 2N148B b961 2N1487 2N1488 Transistor 1967
    Text: M IL -S -19500/208B Ü4 A ugust 1967 SUPERSEDING M IL -S - 19500/208A EL 23 O cto b e r 1964 (See 6. 2) M ILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, H IGH-POW ER TY PES 2N1487, 2N1488, 2N1489, AND 2N1490 T h is s p e c ific a tio n is m an d ato ry fo r u se by a ll D e p a rt­


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    PDF MIL-S-19500/208B 19500/208A 2N1487, 2N1488, 2N1489, 2N1490 2N1487 2N1489 2N1488 O7703 ic sj 2036 2N1490 oc142 2N148B b961 Transistor 1967

    C621

    Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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