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    2NS912 Search Results

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    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2N5586

    Abstract: 2N5585 2N5911 2N5584 2N5912 NF5011 NPD5584 NPD5586 U440 U441
    Text: National Semiconductor N-Channel JFETs co m Wide Band—Low Noise Dual JFETs n o Operating Conditions for these Characteristics VqS1-2 Drift C fu C n , BV G o. CMRR Vfl» •css Gfe Go k i _2 ■q H G 2 Go n G f. Vr R Of* ■g Igss loss Process Pkg. Vos iftV /X


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    2N5584 2N5585 2N5586 2N5911 2NS912 NPD5584 NPD5585 NPD5586 NF5011 NF5012 2N5912 U440 U441 PDF

    2N5912

    Abstract: 2N5911 2N5912 jfet dss2 IT5911 IT5912
    Text: 2N 5911, 2N 5912 IT 5 9 1 1 , IT 5 9 1 2 D ual M onolithic N -C h an n el JF E T FEATURES • Tracking < 20 juV/°C • gfs < 5000 jUmho, 0 - 1 0 0 MHz • Matched V GS. A V GS/ A T . I G.9 fs, PIN CONFIGURATION TO-99 CHIP TOPOGRAPHY TO-71 6022 0037 0037 ' 002? ' 0027


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    2N5911, 2N5912 IT5911, IT5912 IT5911 2N5911 2N5911/W 2N5911/D 2N5912 jfet dss2 PDF

    2N5911

    Abstract: 2n5912 2N5911-12 X2N5912 2NS912
    Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911/2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


    OCR Scan
    2N5911 /2N5912 10sec) 367mW 500mW 2N5911 2NS912 300nA, 1A4432S 000CH33 2n5912 2N5911-12 X2N5912 2NS912 PDF