Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    X2N5912 Search Results

    X2N5912 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    X2N5912 Calogic Dual N-Channel JFET High Frequency Amplifier Original PDF

    X2N5912 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: X2N5912 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)367m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		X2N5912 PDF

    2N5912

    Abstract: 2N5911 2N5911-12 X2N5912
    Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


    Original     		2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW 2N5912 2N5911-12 X2N5912 PDF

    2N5911

    Abstract: 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet
    Text: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


    Original     		2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


    Original     		2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


    OCR Scan     		2N5911/2N5912 367mW 500mW 2N5911 2N5912 DDDCH33 300nA, PDF

    2N5912

    Abstract: No abstract text available
    Text: Dual N-Channe! JFET High Frequency Amplifier caioqic CORPORATION 2N5911 /2N5912 FEATU R ES A B S O L U T E MAXIMUM RATIN G S Ta - 25°C unless otherwise specified • Tight Tracking • Low Insertion L o s s • G o o d M atching Gate-Drain or Gate-Source Voltage . -25V


    OCR Scan     		2N5911 /2N5912 367mW 500mW 2N5912 300nA, PDF

    2N5911

    Abstract: 2n5912 2N5911-12 X2N5912 2NS912
    Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911/2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


    OCR Scan     		2N5911 /2N5912 10sec) 367mW 500mW 2N5911 2NS912 300nA, 1A4432S 000CH33 2n5912 2N5911-12 X2N5912 2NS912 PDF