2SB1558
Abstract: 2SD2387
Text: Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SB1558
2SD2387
2SB1558
2SD2387
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D2387
Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2387
2SB1558
2-16C1A
D2387
transistor D2387 data sheet
2SB1558
2SD2387
ICA350
transistor D2387
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transistor D2387
Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2387
2SB1558
2-16C1A
transistor D2387
D2387
2SD2387
2sd2387 data sheet
transistor D2387 data sheet
2SB1558
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2SB1558
Abstract: 2SD2387 TO-3PI
Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION •With TO-3PI package ·Complement to type 2SD2387 APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SB1558
2SD2387
-140V;
2SB1558
2SD2387
TO-3PI
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B1558
Abstract: 2SB1558 2SD2387 2SB1558 TOSHIBA
Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SB1558
2SD2387
2-16C1A
B1558
2SB1558
2SD2387
2SB1558 TOSHIBA
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2SB1558
Abstract: 2SD2387
Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
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2SB1558
2SD2387
-140V;
2SB1558
2SD2387
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Untitled
Abstract: No abstract text available
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SD2387
2SB1558
2-16C1A
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2SC4793 2sa1837
Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688
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2SC1627A
2SA817A
2SC2235
2SA965
2SC3665
2SA1425
2SC5174
2SA1932
2SC3423
2SA1360
2SC4793 2sa1837
100 amp npn darlington power transistors
2sC5200, 2SA1943
10 amp npn darlington power transistors
2sC5200, 2SA1943, 2sc5198
2SC4684 datasheets
2sa1930 transistor equivalent
2sc5200
2SB906-Y
2sc3303
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D2387
Abstract: 2SB1558 2SD2387 transistor D2387
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SD2387
2SB1558
2-16C1A
D2387
2SB1558
2SD2387
transistor D2387
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2SB1558 TOSHIBA
Abstract: B1558
Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SB1558
2SD2387
2-16C1A
2SB1558 TOSHIBA
B1558
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2SB1558
Abstract: 2SD2387
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2387 APPLICATIONS
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2SD2387
-140V;
2SB1558
2SD2387
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2SB1558
Abstract: 2SD2387
Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú
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2SD2387
2SB1558
2SB1558
2SD2387
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2SB1558
Abstract: 2SD2387
Text: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)
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2SB1558
2SD2387
2SB1558
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2387 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2387
2SB1558
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER _ 2SD2387 POW ER AM PLIFIER APPLICATIONS j, Unit in nun 3.2 t 0-3 • • High Breakdown Voltage : V c e O = 140V (Min.) Complementary to 2SB1558 i= M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2387
2SB1558
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 PO W ER AM PLIFIER APPLICATIONS U nit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1558 ^o 1 , /
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2SD2387
2SB1558
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2SB1558
Abstract: 2SD2387
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 03.2 ±0.2
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2SD2387
2SB1558
2SD2387
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2SB1558
Abstract: 2SD2387
Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • 03.2 ± 0.2 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C)
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2SD2387
2SB1558
2SD2387
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2SB1558
Abstract: 2SD2387
Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2387 A. eÆ A rsi I eri n M AXIM UM RATINGS (Tc = 25°C)
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2SB1558
2SD2387
2SB1558
2SD2387
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2SB1558
Abstract: 2SD2387
Text: TO SH IBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)
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2SB1558
2SD2387
2SB1558
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SB1 558 Unit in mm 15.9MAX. High Breakdown Voltage : V£EO = —140V (Min.) Complementary to 2SD2387 ^o 1 , / — J- f / ik A 5 MAXIMUM RATINGS (Ta = 25°C)
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2SB1558
--140V
2SD2387
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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2SR562
2SB1329
2SA1706
2SB1433
2SB1517
2SA1707
2SA1708
2SB1459
2SB1332
2sb1355
2SB1493
2SB1516
2SA1842
2sb1261
2SB906
2SB1328
2SB1329
2SB1332
2SA1770
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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