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    D2387 Search Results

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    D2387 Price and Stock

    Infineon Technologies AG GATELEAD2387XPSA1

    STD THYR/DIODEN DISC - Trays (Alt: GATELEAD2387XPSA1)
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    Avnet Americas GATELEAD2387XPSA1 Tray 232
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    Samtec Inc FFSD-05-D-23.87-01-N-R

    Cable Assembly Ribbon 0.606m 10 POS IDC to 10 POS IDC RCP-RCP - Bulk (Alt: FFSD-05-D-23.87-01-N-R)
    Free Sample
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    Avnet Americas FFSD-05-D-23.87-01-N-R Bulk 1
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    Master Electronics FFSD-05-D-23.87-01-N-R
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    • 10 $18.85
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    • 1000 $9.74
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    Sager FFSD-05-D-23.87-01-N-R
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    Samtec Inc ACD-238720-01

    - Bulk (Alt: ACD-238720-01)
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    Avnet Americas ACD-238720-01 Bulk 10,800
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    ACD-238720-01 Bulk 10,800
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    Samtec Inc FFSD-10-D-23.87-01-N

    Cable Assembly Ribbon 0.606m 20 POS IDC to 20 POS IDC RCP-RCP - Bulk (Alt: FFSD-10-D-23.87-01-N)
    Free Sample
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    Avnet Americas FFSD-10-D-23.87-01-N Bulk 1
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    Master Electronics FFSD-10-D-23.87-01-N
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    • 10 $19.31
    • 100 $12.46
    • 1000 $11.24
    • 10000 $9.93
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    Sager FFSD-10-D-23.87-01-N
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    Fabco-Air PSD2-3.875

    Cylinder, industry interchangeable,3/4" Bore, sgl rod, dbl act, Pancake II | Fabco-Air PSD2-3.875
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    RS PSD2-3.875 Bulk 1
    • 1 $101.89
    • 10 $101.89
    • 100 $101.89
    • 1000 $101.89
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    Find more D2387 price and stock on Findchips.com

    D2387 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Text: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387 PDF

    transistor D2387

    Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
    Text: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2387 2SB1558 2-16C1A transistor D2387 D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558 PDF

    Untitled

    Abstract: No abstract text available
    Text: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2387 2SB1558 2-16C1A PDF

    D2387

    Abstract: 2SB1558 2SD2387 transistor D2387
    Text: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		2SD2387 2SB1558 2-16C1A D2387 2SB1558 2SD2387 transistor D2387 PDF